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SD8268-21H

SD8268-21H

For Reference Only

Part Number SD8268-21H
PNEDA Part # SD8268-21H
Description RF POWER TRANSISTOR
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 8,388
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SD8268-21H Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberSD8268-21H
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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SD8268-21H Specifications

ManufacturerMicrosemi Corporation
Series-
Transistor Type-
Voltage - Collector Emitter Breakdown (Max)-
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

5GHz

Noise Figure (dB Typ @ f)

2.1dB ~ 3dB @ 1GHz ~ 2GHz

Gain

-

Power - Max

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce

65 @ 15mA, 10V

Current - Collector (Ic) (Max)

25mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

TO-236AB (SOT23)

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

75V

Frequency - Transition

3.5GHz

Noise Figure (dB Typ @ f)

-

Gain

7dB

Power - Max

200W

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 2A, 5V

Current - Collector (Ic) (Max)

8A

Operating Temperature

200°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-422A

Supplier Device Package

CDFM2

BFR93AE6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

6GHz

Noise Figure (dB Typ @ f)

1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz

Gain

9.5dB ~ 14.5dB

Power - Max

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 30mA, 8V

Current - Collector (Ic) (Max)

90mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

BF 775 E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

5GHz

Noise Figure (dB Typ @ f)

1.4dB ~ 2dB @ 900MHz ~ 1.8GHz

Gain

10.5dB ~ 16dB

Power - Max

280mW

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 15mA, 8V

Current - Collector (Ic) (Max)

45mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

1000MP

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

-

Frequency - Transition

1.15GHz

Noise Figure (dB Typ @ f)

-

Gain

10.8dB

Power - Max

5.3W

DC Current Gain (hFE) (Min) @ Ic, Vce

15 @ 100mA, 5V

Current - Collector (Ic) (Max)

300mA

Operating Temperature

-

Mounting Type

Chassis Mount

Package / Case

55FW

Supplier Device Package

55FW

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