Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

APT30M19JVFR

APT30M19JVFR

For Reference Only

Part Number APT30M19JVFR
PNEDA Part # APT30M19JVFR
Description MOSFET N-CH 300V 130A SOT-227
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 5,940
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT30M19JVFR Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT30M19JVFR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • APT30M19JVFR Datasheet
  • where to find APT30M19JVFR
  • Microsemi

  • Microsemi APT30M19JVFR
  • APT30M19JVFR PDF Datasheet
  • APT30M19JVFR Stock

  • APT30M19JVFR Pinout
  • Datasheet APT30M19JVFR
  • APT30M19JVFR Supplier

  • Microsemi Distributor
  • APT30M19JVFR Price
  • APT30M19JVFR Distributor

APT30M19JVFR Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS V®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs19mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs975nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds21600pF @ 25V
FET Feature-
Power Dissipation (Max)700W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageISOTOP®
Package / CaseSOT-227-4, miniBLOC

The Products You May Be Interested In

RJK4002DPP-M0#T2

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.9Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

6nC @ 100V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

165pF @ 25V

FET Feature

-

Power Dissipation (Max)

20W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FL

Package / Case

TO-220-3 Full Pack

NVMFS5C645NLAFT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

22A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2200pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 79W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

NTMS4801NR2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

7.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2201pF @ 25V

FET Feature

-

Power Dissipation (Max)

800mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRF6655TR1PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

4.2A (Ta), 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

62mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4.8V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

11.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

530pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.2W (Ta), 42W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ SH

Package / Case

DirectFET™ Isometric SH

NTMSD6N303R2

ON Semiconductor

Manufacturer

ON Semiconductor

Series

FETKY™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

32mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

950pF @ 24V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

AUIPS2031R

AUIPS2031R

Infineon Technologies

IC SW IPS 1CH LOW SIDE DPAK

LS4148-GS08

LS4148-GS08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD80

XC6VSX475T-1FF1759I

XC6VSX475T-1FF1759I

Xilinx

IC FPGA 840 I/O 1759FCBGA

2920L075DR

2920L075DR

Littelfuse

PTC RESET FUSE 30V 750MA 2920

XC95288XL-10TQ144C

XC95288XL-10TQ144C

Xilinx

IC CPLD 288MC 10NS 144TQFP

RJH60D5BDPQ-E0#T2

RJH60D5BDPQ-E0#T2

Renesas Electronics America

IGBT 600V 75A 200W TO-247

IRF9310TRPBF

IRF9310TRPBF

Infineon Technologies

MOSFET P-CH 30V 20A 8-SOIC

B560C-13-F

B560C-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 5A SMC

CY2305SXC-1

CY2305SXC-1

Cypress Semiconductor

IC CLK ZDB 5OUT 133MHZ 8SOIC

BTS723GWXUMA1

BTS723GWXUMA1

Infineon Technologies

IC PWR SW 2CH 58V HISIDE PDSO14

ZTB800J

ZTB800J

ECS

CER RES 800.0000KHZ T/H

NC7SZ125M5X

NC7SZ125M5X

ON Semiconductor

IC BUF NON-INVERT 5.5V SOT23-5