Infineon Technologies Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerInfineon Technologies
Records 720
Page 17/24
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE SCHOTTKY 1.2KV 7.5A TO220 |
5,022 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 7.5A (DC) | 1.8V @ 7.5A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 1200V | 380pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 8A TO220-2 |
6,372 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 8A (DC) | 2.1V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 600V | 240pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 9A TO220-2 |
3,618 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 9A (DC) | 2.1V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1200V 10A TO220-2 |
197 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 1200V | 500pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 10A TO220-2 |
6,048 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 10A (DC) | 2.1V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 600V | 290pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 12A TO220-2 |
7,452 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 12A (DC) | 2.1V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1200V 15A TO220-2 |
2,808 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 360µA @ 1200V | 750pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 2A TO220-2FP |
4,824 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 2A (DC) | 1.9V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 15µA @ 600V | 60pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 3A TO220-2FP |
2,772 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 3A (DC) | 1.9V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 600V | 90pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 40V 120MA SCD80-2 |
6,156 |
|
- | Schottky | 40V | 120mA | 750mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 30V | 6pF @ 1V, 1MHz | Surface Mount | SC-80 | SCD-80 | 150°C (Max) |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 30V 2A SOT363-6 |
7,200 |
|
- | Schottky | 30V | 2A (DC) | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | 70pF @ 1V, 1MHz | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 | -55°C ~ 125°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 30V 200MA SOT323 |
5,022 |
|
- | Schottky | 30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | SC-70, SOT-323 | PG-SOT323-3 | 150°C (Max) |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 19.3A TO263 |
6,192 |
|
- | Standard | 600V | 19.3A (DC) | 2V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 29.2A TO263 |
4,140 |
|
- | Standard | 600V | 29.2A (DC) | 2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 87ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 31A TO263-3 |
6,858 |
|
- | Standard | 1200V | 31A (DC) | 2.15V @ 18A | Fast Recovery =< 500ns, > 200mA (Io) | 195ns | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 71A TO263-3 |
5,292 |
|
- | Standard | 600V | 71A (DC) | 2V @ 45A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 7.3A TO252-3 |
4,536 |
|
- | Standard | 600V | 7.3A (DC) | 2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 62ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 19.3A TO252 |
6,606 |
|
- | Standard | 600V | 19.3A (DC) | 2V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 29.2A TO252 |
5,004 |
|
- | Standard | 600V | 29.2A (DC) | 2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 87ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 11.2A TO220 |
7,704 |
|
- | Standard | 1200V | 11.2A (DC) | 2.15V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 14.7A TO220 |
4,500 |
|
- | Standard | 600V | 14.7A (DC) | 2V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 50µA @ 600V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 23A TO220-2 |
8,856 |
|
- | Standard | 1200V | 23A (DC) | 2.15V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 41A TO220-2 |
7,668 |
|
- | Standard | 600V | 41A (DC) | 2V @ 23A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 50µA @ 600V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 4A TO220-2FP |
6,750 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 5A TO220-2FP |
5,526 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 600V | 240pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO220-2FP |
3,436 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 3A TO252-3 |
4,536 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 3A (DC) | 2.3V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 15µA @ 600V | 60pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 28A TO263-3 |
7,398 |
|
- | Standard | 1200V | 28A (DC) | 2.15V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 41A TO263-3 |
6,264 |
|
- | Standard | 600V | 41A (DC) | 2V @ 23A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 21A TO22FP |
5,868 |
|
- | Standard | 600V | 21A | 2.05V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 130ns | 40µA @ 600V | - | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -55°C ~ 175°C |