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Infineon Technologies Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerInfineon Technologies
Records 720
Page 15/24
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SIDC23D120F6X1SA1
Infineon Technologies
DIODE GEN PURP 1.2KV 25A WAFER
7,956
-
Standard
1200V
25A (DC)
2.1V @ 25A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC23D120H6X1SA1
Infineon Technologies
DIODE GEN PURP 1.2KV 35A WAFER
6,282
-
Standard
1200V
35A (DC)
1.6V @ 35A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC23D60E6X1SA4
Infineon Technologies
DIODE GEN PURP 600V 50A WAFER
3,402
-
Standard
600V
50A (DC)
1.25V @ 50A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC23D60E6YX1SA1
Infineon Technologies
DIODE GEN PURP 600V 50A WAFER
2,394
-
Standard
600V
50A (DC)
1.25V @ 50A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC24D30SIC3
Infineon Technologies
DIODE SILICON 300V 10A WAFER
4,212
-
Silicon Carbide Schottky
300V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
200µA @ 300V
600pF @ 1V, 1MHz
Surface Mount
Die
Sawn on foil
-55°C ~ 175°C
SIDC26D60C6
Infineon Technologies
DIODE GEN PURP 600V 100A WAFER
6,336
-
Standard
600V
100A (DC)
1.9V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC30D120E6X1SA2
Infineon Technologies
DIODE GEN PURP 1.2KV 35A WAFER
5,724
-
Standard
1200V
35A (DC)
1.9V @ 35A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC30D120F6X1SA2
Infineon Technologies
DIODE GEN PURP 1.2KV 35A WAFER
5,670
-
Standard
1200V
35A (DC)
2.1V @ 35A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC30D120H6X1SA4
Infineon Technologies
DIODE GEN PURP 1.2KV 50A WAFER
6,480
-
Standard
1200V
50A (DC)
1.6V @ 50A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC30D60E6X1SA1
Infineon Technologies
DIODE GEN PURP 600V 75A WAFER
3,294
-
Standard
600V
75A (DC)
1.25V @ 75A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC32D170HX1SA3
Infineon Technologies
DIODE GEN PURP 1.7KV 50A WAFER
4,392
-
Standard
1700V
50A (DC)
1.8V @ 50A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1700V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC38D60C6X1SA3
Infineon Technologies
DIODE GEN PURP 600V 150A WAFER
3,042
-
Standard
600V
150A (DC)
1.9V @ 150A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC42D120E6X1SA4
Infineon Technologies
DIODE GEN PURP 1.2KV 50A WAFER
8,370
-
Standard
1200V
50A (DC)
1.9V @ 50A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC42D120F6X1SA3
Infineon Technologies
DIODE GEN PURP 1.2KV 50A WAFER
8,298
-
Standard
1200V
50A (DC)
2.1V @ 50A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC42D120H6X1SA3
Infineon Technologies
DIODE GEN PURP 1.2KV 75A WAFER
6,552
-
Standard
1200V
75A (DC)
1.6V @ 75A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC42D170E6X1SA2
Infineon Technologies
DIODE GEN PURP 1.7KV 50A WAFER
7,128
-
Standard
1700V
50A (DC)
2.15V @ 50A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1700V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
SIDC42D60E6X1SA1
Infineon Technologies
DIODE GEN PURP 600V 100A WAFER
4,806
-
Standard
600V
100A (DC)
1.25V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC46D170HX1SA2
Infineon Technologies
DIODE GEN PURP 1.7KV 75A WAFER
6,840
-
Standard
1700V
75A (DC)
1.8V @ 75A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1700V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC50D60C6X1SA1
Infineon Technologies
DIODE GEN PURP 600V 200A WAFER
3,654
-
Standard
600V
200A (DC)
1.9V @ 200A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC53D120H6X1SA3
Infineon Technologies
DIODE GEN PURP 1.2KV 100A WAFER
2,232
-
Standard
1200V
100A (DC)
1.6V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC56D120E6X1SA1
Infineon Technologies
DIODE GEN PURP 1.2KV 75A WAFER
2,700
-
Standard
1200V
75A (DC)
1.9V @ 75A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC56D120F6X1SA1
Infineon Technologies
DIODE GEN PURP 1.2KV 75A WAFER
6,966
-
Standard
1200V
75A (DC)
2.1V @ 75A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC56D170E6X1SA1
Infineon Technologies
DIODE GEN PURP 1.7KV 75A WAFER
6,120
-
Standard
1700V
75A (DC)
2.15V @ 75A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1700V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
SIDC56D60E6X1SA1
Infineon Technologies
DIODE GEN PURP 600V 150A WAFER
6,570
-
Standard
600V
150A (DC)
1.25V @ 150A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC59D170HX1SA2
Infineon Technologies
DIODE GEN PURP 1.7KV 100A WAFER
8,982
-
Standard
1700V
100A (DC)
1.8V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1700V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC73D170E6X1SA2
Infineon Technologies
DIODE GEN PURP 1.7KV 100A WAFER
4,662
-
Standard
1700V
100A (DC)
2.15V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1700V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC78D170HX1SA1
Infineon Technologies
DIODE GEN PURP 1.7KV 150A WAFER
8,640
-
Standard
1700V
150A (DC)
1.8V @ 150A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1700V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC81D120E6X1SA4
Infineon Technologies
DIODE GEN PURP 1.2KV 100A WAFER
5,724
-
Standard
1200V
100A (DC)
1.9V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC81D120F6X1SA1
Infineon Technologies
DIODE GEN PURP 1.2KV 100A WAFER
2,286
-
Standard
1200V
100A (DC)
2.1V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC81D120H6X1SA2
Infineon Technologies
DIODE GEN PURP 1.2KV 150A WAFER
3,744
-
Standard
1200V
150A (DC)
1.6V @ 150A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C