Infineon Technologies Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerInfineon Technologies
Records 720
Page 19/24
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 2A TO263-2 |
2,628 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 2A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 330µA @ 650V | 70pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 3A TO263-2 |
8,478 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 3A (DC) | 1.8V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 500µA @ 650V | 100pF @ 1V, 1MHz | Surface Mount | TO-262 | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 4A TO263-2 |
6,678 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 4A (DC) | 1.8V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 670µA @ 650V | 130pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 5A TO263-2 |
2,214 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 830µA @ 650V | 160pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 6A TO263-2 |
7,380 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 6A (DC) | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 1.1mA @ 650V | 190pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 8A TO263-2 |
5,022 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 8A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 1.4mA @ 650V | 250pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 9A TO263-2 |
3,024 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 9A (DC) | 1.8V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 1.6mA @ 650V | 270pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO263-2 |
2,070 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 1.7mA @ 650V | 300pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO263-2 |
126 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.8V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 2.1mA @ 650V | 360pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 2A VSON-4 |
5,220 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 2A (DC) | 1.7V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 35µA @ 650V | 70pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 4A VSON-4 |
2,718 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 4A (DC) | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 650V | 130pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 6A VSON-4 |
8,676 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 110µA @ 650V | 190pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 8A VSON-4 |
7,578 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 650V | 250pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 10A VSON-4 |
2,034 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 12A VSON-4 |
3,474 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 650V | 360pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 200A DIE |
7,542 |
|
- | Standard | 1200V | 200A | 2.7V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 360ns | 3.6µA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
7,686 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
4,230 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 25A DIE |
4,554 |
|
- | Standard | 1200V | 25A | 2.7V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 700nA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
2,664 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
5,688 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
8,874 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
8,568 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
2,520 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
5,832 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
7,866 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
4,590 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
7,398 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
7,344 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
2,358 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |