SIDC30D120H6X1SA4
For Reference Only
| Part Number | SIDC30D120H6X1SA4 |
| PNEDA Part # | SIDC30D120H6X1SA4 |
| Description | DIODE GEN PURP 1.2KV 50A WAFER |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,480 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SIDC30D120H6X1SA4 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | SIDC30D120H6X1SA4 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
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Notes
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- Orders cannot be canceled after shipping the packages.
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SIDC30D120H6X1SA4 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200V |
| Current - Average Rectified (Io) | 50A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.6V @ 50A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 27µA @ 1200V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101, TMBS® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 80V Current - Average Rectified (Io) 30A Voltage - Forward (Vf) (Max) @ If 950mV @ 30A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 80V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 700mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 50V Capacitance @ Vr, F 80pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-213AB, MELF Supplier Device Package GL41 (DO-213AB) Operating Temperature - Junction -55°C ~ 150°C |
