Vishay Siliconix Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
Records 3,936
Page 97/132
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 200V 31A TO-262 |
6,246 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 31A (Tc) | 10V | 82mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | ±30V | 2370pF @ 25V | - | 3.1W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 200V 31A TO-262 |
2,358 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 31A (Tc) | 10V | 82mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | ±30V | 2370pF @ 25V | - | 3.1W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 600V 9.2A TO-262 |
2,916 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | ±30V | 1400pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 600V 9.2A TO-262 |
2,934 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | ±30V | 1400pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 50V 8.2A I-PAK |
5,382 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 8.2A (Tc) | 10V | 200mOhm @ 4.2A, 10V | 4V @ 250µA | 10nC @ 10V | ±20V | 250pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 600V 1.4A I-PAK |
7,254 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 1.4A (Tc) | 10V | 7Ohm @ 840mA, 10V | 4V @ 250µA | 14nC @ 10V | ±30V | 229pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET P-CH 50V 5.3A I-PAK |
3,222 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 5.3A (Tc) | 10V | 500mOhm @ 2.8A, 10V | 4V @ 250µA | 9.1nC @ 10V | ±20V | 240pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 60V 10A TO-220AB |
5,184 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 200mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 10A TO-262 |
4,140 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 200mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 60V 10A D2PAK |
4,284 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 200mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 10A D2PAK |
7,344 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 200mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 17A TO-262 |
5,616 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 60V 17A D2PAK |
3,348 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 17A D2PAK |
4,176 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 30A TO-262 |
2,160 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 50mOhm @ 18A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 1200pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 60V 30A D2PAK |
6,678 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 50mOhm @ 18A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 1200pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 30A D2PAK |
6,750 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 50mOhm @ 18A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 1200pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 30A D2PAK |
6,894 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 50mOhm @ 18A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 1200pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO-262 |
6,696 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 28mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1900pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
8,388 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 28mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1900pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO-262 |
5,418 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 3.7W (Ta), 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
6,768 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 3.7W (Ta), 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
2,466 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 3.7W (Ta), 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
5,166 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 3.7W (Ta), 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 30V 100A D2PAK |
8,658 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4V, 10V | 7mOhm @ 60A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | ±20V | 3500pF @ 25V | - | 3.8W (Ta), 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 30V 100A D2PAK |
4,212 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4V, 10V | 7mOhm @ 60A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | ±20V | 3500pF @ 25V | - | 3.8W (Ta), 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 20V 61A TO-262 |
4,248 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 61A (Tc) | 4.5V, 7V | 13mOhm @ 37A, 7V | 700mV @ 250µA | 58nC @ 4.5V | ±10V | 2500pF @ 15V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 30V 64A D2PAK |
7,362 |
|
FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 64A (Tc) | - | 14mOhm @ 34A, 10V | 1V @ 250µA | 43nC @ 4.5V | - | 1900pF @ 25V | - | - | - | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 20V 48A TO-262 |
5,202 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 48A (Tc) | 4.5V, 7V | 16mOhm @ 29A, 7V | 700mV @ 250µA | 43nC @ 4.5V | ±10V | 2000pF @ 15V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 20V 39A TO-262 |
6,858 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 39A (Tc) | 4.5V, 7V | 20mOhm @ 23A, 7V | 700mV @ 250µA | 31nC @ 4.5V | ±10V | 1300pF @ 15V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |