Vishay Siliconix Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
Records 3,936
Page 93/132
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET P-CH 100V 6.8A D2PAK |
5,544 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 600mOhm @ 4.1A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 100V 12A TO-262 |
8,136 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 10V | 300mOhm @ 7.2A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 860pF @ 25V | - | - | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET P-CH 100V 12A D2PAK |
5,724 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 10V | 300mOhm @ 7.2A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 860pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 100V 19A TO-262 |
5,994 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 19A (Tc) | 10V | 200mOhm @ 11A, 10V | 4V @ 250µA | 61nC @ 10V | ±20V | 1400pF @ 25V | - | - | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET P-CH 100V 19A D2PAK |
2,934 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 19A (Tc) | 10V | 200mOhm @ 11A, 10V | 4V @ 250µA | 61nC @ 10V | ±20V | 1400pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 200V 1.8A TO-262 |
3,492 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 1.8A (Tc) | 10V | 3Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 170pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET P-CH 200V 1.8A D2PAK |
5,994 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 1.8A (Tc) | 10V | 3Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 170pF @ 25V | - | 3W (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 200V 1.8A D2PAK |
5,760 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 1.8A (Tc) | 10V | 3Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 170pF @ 25V | - | 3W (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 200V 3.5A TO-262 |
3,978 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 3.5A (Tc) | 10V | 1.5Ohm @ 1.5A, 10V | 4V @ 250µA | 22nC @ 10V | ±20V | 350pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET P-CH 200V 3.5A D2PAK |
6,282 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 3.5A (Tc) | 10V | 1.5Ohm @ 1.5A, 10V | 4V @ 250µA | 22nC @ 10V | ±20V | 350pF @ 25V | - | 3W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 200V 3.5A D2PAK |
3,726 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 3.5A (Tc) | 10V | 1.5Ohm @ 1.5A, 10V | 4V @ 250µA | 22nC @ 10V | ±20V | 350pF @ 25V | - | 3W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 200V 6.5A TO-262 |
7,326 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 6.5A (Tc) | 10V | 800mOhm @ 3.9A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 700pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET P-CH 200V 6.5A D2PAK |
6,642 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 6.5A (Tc) | 10V | 800mOhm @ 3.9A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 700pF @ 25V | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 200V 6.5A D2PAK |
6,336 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 6.5A (Tc) | 10V | 800mOhm @ 3.9A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 700pF @ 25V | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 200V 11A TO-262 |
6,174 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1200pF @ 25V | - | 3W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET P-CH 200V 11A D2PAK |
8,622 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1200pF @ 25V | - | 3W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 6.7A TO-262 |
3,276 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET P-CH 60V 6.7A D2PAK |
4,284 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 6.7A D2PAK |
5,922 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 11A D2PAK |
7,254 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 11A (Tc) | 10V | 280mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 570pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 18A D2PAK |
6,228 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 10V | 140mOhm @ 11A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 1100pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 2.2A D2PAK |
2,502 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.2A (Tc) | 10V | 4.4Ohm @ 1.3A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 2.2A D2PAK |
5,454 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.2A (Tc) | 10V | 4.4Ohm @ 1.3A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A TO-262 |
7,776 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250µA | 23nC @ 10V | ±30V | 510pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A D2PAK |
6,912 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250µA | 23nC @ 10V | ±30V | 510pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A D2PAK |
4,986 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250µA | 23nC @ 10V | ±30V | 510pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A D2PAK |
6,804 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4V @ 250µA | 31nC @ 10V | ±20V | 660pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A D2PAK |
7,902 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4V @ 250µA | 31nC @ 10V | ±20V | 660pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A TO-262 |
8,838 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 42nC @ 10V | ±30V | 1036pF @ 25V | - | - | - | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
7,722 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 42nC @ 10V | ±30V | 1036pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |