Vishay Siliconix Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
Records 3,936
Page 80/132
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 100V 9.2A TO-220AB |
4,752 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 9.2A (Tc) | 10V | 270mOhm @ 5.5A, 10V | 4V @ 250µA | 16nC @ 10V | ±20V | 360pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 19A TO-220AB |
7,524 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 19A (Tc) | 10V | 200mOhm @ 11A, 10V | 4V @ 250µA | 61nC @ 10V | ±20V | 1400pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 16A TO-247AC |
2,088 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 16A (Tc) | 10V | 300mOhm @ 9.6A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 2600pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 8.1A TO-220AB |
8,028 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 8.1A (Tc) | 10V | 450mOhm @ 5.1A, 10V | 4V @ 250µA | 41nC @ 10V | ±20V | 770pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 15A TO-220AB |
7,542 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Tc) | 4V, 5V | 160mOhm @ 9A, 5V | 2V @ 250µA | 28nC @ 5V | ±10V | 930pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 1.3A 4-DIP |
8,964 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.3A (Ta) | 4V, 5V | 270mOhm @ 780mA, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 60V 17A TO-220AB |
3,978 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 4V, 5V | 100mOhm @ 10A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 1.7A 4-DIP |
4,662 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 1.7A (Ta) | 4V, 5V | 200mOhm @ 1A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 100V 28A TO-220AB |
8,946 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 4V, 5V | 77mOhm @ 17A, 5V | 2V @ 250µA | 64nC @ 5V | ±10V | 2200pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 9.2A TO-220AB |
4,194 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 9.2A (Tc) | 4V, 5V | 270mOhm @ 5.5A, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 5.6A TO-220AB |
7,092 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 4V, 5V | 540mOhm @ 3.4A, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 30A TO-220AB |
3,780 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4V, 5V | 50mOhm @ 18A, 5V | 2V @ 250µA | 35nC @ 5V | ±10V | 1600pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 2.5A 4-DIP |
4,464 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 2.5A (Ta) | 4V, 5V | 100mOhm @ 1.5A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 60V 10A TO-220AB |
4,176 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 4V, 5V | 200mOhm @ 6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 1A 4-DIP |
5,040 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 1A (Ta) | 4V, 5V | 540mOhm @ 600mA, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 250V 15A TO-247AC |
2,016 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 15A (Tc) | 10V | 280mOhm @ 9A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1400pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
4,860 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 10V | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 17A TO-220AB |
4,572 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 21A TO-247AC |
5,994 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 21A (Tc) | 10V | 200mOhm @ 13A, 10V | 4V @ 250µA | 61nC @ 10V | ±20V | 1400pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 10A TO-220AB |
4,644 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 200mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 2.2A TO-220AB |
2,088 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.2A (Tc) | 10V | 4.4Ohm @ 1.3A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A TO-220AB |
4,230 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4V @ 250µA | 31nC @ 10V | ±20V | 660pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 18A TO-220AB |
3,400 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 10V | 140mOhm @ 11A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 1100pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 5.6A DPAK |
5,148 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
7,290 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 10V | 540mOhm @ 2.6A, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 37A TO220FP |
5,004 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 37A (Tc) | 10V | 18mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 500V 4.6A TO220FP |
4,266 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 4.6A (Tc) | 10V | 850mOhm @ 2.8A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1300pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
8,190 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 2.6A (Tc) | 10V | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 200V 20A TO-247AC |
3,186 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 20A (Tc) | 10V | 180mOhm @ 12A, 10V | 4V @ 250µA | 70nC @ 10V | ±20V | 1300pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 38A TO-247AC |
5,814 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 38A (Tc) | 10V | 75mOhm @ 23A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 5400pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |