Vishay Siliconix Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
Records 3,936
Page 16/132
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 800V 4.1A TO-220AB |
29,220 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 40V 120A TO-263 |
15,732 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.5V @ 250µA | 330nC @ 10V | ±20V | 13980pF @ 20V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 120A TO263 |
22,866 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 3.8mOhm @ 20A, 10V | 3.5V @ 250µA | 190nC @ 10V | ±20V | 7230pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 50V 18A TO-220AB |
15,132 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 18A (Tc) | 10V | 140mOhm @ 9.3A, 10V | 4V @ 250µA | 39nC @ 10V | ±20V | 900pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO-220AB |
20,172 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4V, 5V | 28mOhm @ 31A, 5V | 2V @ 250µA | 66nC @ 5V | ±10V | 3300pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 45A D2PAK |
188,160 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 45A (Tc) | 6V, 10V | 58mOhm @ 20A, 10V | 4V @ 250µA | 140nC @ 10V | ±30V | 5000pF @ 25V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 20A TO-247AC |
18,438 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 20A (Tc) | 10V | 180mOhm @ 12A, 10V | 4V @ 250µA | 70nC @ 10V | ±20V | 1300pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 65A D2PAK |
19,884 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 65A (Tc) | 10V | 30mOhm @ 30A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 5100pF @ 25V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 9A D2PAK |
63,240 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 4V, 5V | 400mOhm @ 5.4A, 5V | 2V @ 250µA | 40nC @ 10V | ±10V | 1100pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 9.2A D2PAK |
12,228 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | ±30V | 1400pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 650V 12A D2PAK |
22,950 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 70nC @ 10V | ±30V | 1224pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 14A D2PAK |
18,576 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 280mOhm @ 8.4A, 10V | 4V @ 250µA | 68nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 200V 12A TO-247AC |
16,914 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 12A (Tc) | 10V | 500mOhm @ 7.2A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1200pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 120A TO220AB |
6,426 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 6.7mOhm @ 30A, 10V | 2.5V @ 250µA | 270nC @ 10V | ±20V | 14280pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 120A TO220AB |
27,210 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 2.3mOhm @ 30A, 10V | 2.5V @ 250µA | 126nC @ 10V | ±20V | 11113pF @ 30V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 16A TO-247AC |
14,046 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 16A (Tc) | 10V | 300mOhm @ 9.6A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 2600pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC |
23,796 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 400mOhm @ 8.4A, 10V | 4V @ 250µA | 64nC @ 10V | ±30V | 2038pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 30A TO-247AC |
19,884 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 30A (Tc) | 10V | 85mOhm @ 18A, 10V | 4V @ 250µA | 140nC @ 10V | ±20V | 2800pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 11A TO-247AC |
19,128 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 580mOhm @ 6A, 10V | 4V @ 250µA | 70nC @ 10V | ±30V | 2100pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC |
62,322 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 270mOhm @ 12A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 4200pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC |
24,714 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 270mOhm @ 12A, 10V | 4V @ 250µA | 105nC @ 10V | ±30V | 3100pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 23A TO-247AC |
13,974 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 23A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 4500pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO-220AB |
20,520 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 250mOhm @ 12A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 2870pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 70A TO-247AC |
7,056 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 70A (Tc) | 10V | 9mOhm @ 78A, 10V | 4V @ 250µA | 190nC @ 10V | ±20V | 7400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC |
15,606 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 270mOhm @ 12A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 3600pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 38A TO-247AC |
28,218 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 38A (Tc) | 10V | 75mOhm @ 23A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 5400pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 1000V 6.1A TO-247AC |
9,048 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 6.1A (Tc) | 10V | 2Ohm @ 3.6A, 10V | 4V @ 250µA | 190nC @ 10V | ±20V | 2800pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 16A TO-247AC |
8,460 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 400mOhm @ 9.6A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 3500pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 27A TO-247AC |
90,954 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 27A (Tc) | 10V | 220mOhm @ 16A, 10V | 5V @ 250µA | 180nC @ 10V | ±30V | 4660pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 36A SUPER247 |
17,532 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 36A (Tc) | 10V | 130mOhm @ 22A, 10V | 4V @ 250µA | 180nC @ 10V | ±30V | 5579pF @ 25V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |