Vishay Semiconductor Diodes Division Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerVishay Semiconductor Diodes Division
Records 11,281
Page 175/377
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 7.5A 60V TO-220AC |
8,442 |
|
TMBS® | Schottky | 60V | 7.5A | 800mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3.2A TO263AC |
6,066 |
|
Automotive, AEC-Q101, eSMP® | Standard | 100V | 3.2A | 1.15V @ 12A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 20µA @ 100V | 90pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3.2A TO263AC |
2,394 |
|
Automotive, AEC-Q101, eSMP® | Standard | 200V | 3.2A | 1.15V @ 12A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 20µA @ 200V | 90pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3.2A TO263AC |
5,112 |
|
Automotive, AEC-Q101, eSMP® | Standard | 400V | 3.2A | 1.15V @ 12A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 20µA @ 400V | 90pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A DO201AD |
8,316 |
|
SUPERECTIFIER® | Standard | 50V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A DO201AD |
2,100 |
|
SUPERECTIFIER® | Standard | 50V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO201AD |
3,024 |
|
SUPERECTIFIER® | Standard | 100V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 1µA @ 100V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO201AD |
2,826 |
|
SUPERECTIFIER® | Standard | 100V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 1µA @ 100V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3A DO201AD |
7,740 |
|
SUPERECTIFIER® | Standard | 150V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 1µA @ 150V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3A DO201AD |
6,498 |
|
SUPERECTIFIER® | Standard | 150V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 1µA @ 150V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO201AD |
6,390 |
|
SUPERECTIFIER® | Standard | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 200V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO201AD |
3,562 |
|
SUPERECTIFIER® | Standard | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 200V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 3A DO201AD |
2,808 |
|
SUPERECTIFIER® | Standard | 300V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 3µA @ 300V | 48pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 3A DO201AD |
6,444 |
|
SUPERECTIFIER® | Standard | 300V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 3µA @ 300V | 48pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
7,758 |
|
SUPERECTIFIER® | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 4µA @ 400V | 48pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
6,822 |
|
SUPERECTIFIER® | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 4µA @ 400V | 48pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 5A DO201AD |
3,096 |
|
SUPERECTIFIER® | Standard | 50V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 5A DO201AD |
2,412 |
|
SUPERECTIFIER® | Standard | 50V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 5A DO201AD |
6,264 |
|
SUPERECTIFIER® | Standard | 100V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 5A DO201AD |
4,950 |
|
SUPERECTIFIER® | Standard | 100V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 5A DO201AD |
2,448 |
|
SUPERECTIFIER® | Standard | 150V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 5A DO201AD |
4,122 |
|
SUPERECTIFIER® | Standard | 150V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 5A DO201AD |
6,984 |
|
SUPERECTIFIER® | Standard | 200V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 5A DO201AD |
2,880 |
|
SUPERECTIFIER® | Standard | 200V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 5A DO201AD |
5,292 |
|
SUPERECTIFIER® | Standard | 300V | 5A | 1.25V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 48pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 5A DO201AD |
3,870 |
|
SUPERECTIFIER® | Standard | 300V | 5A | 1.25V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 48pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 5A DO201AD |
2,160 |
|
SUPERECTIFIER® | Standard | 400V | 5A | 1.25V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 48pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 7.5A 60V ITO-220A |
4,068 |
|
- | Schottky | 60V | 7.5A | 800mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 60V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 12A TO277A |
8,082 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 45V | 12A | 580mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 12A TO277A |
6,336 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 60V | 12A | 610mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.9mA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |