Vishay Semiconductor Diodes Division Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerVishay Semiconductor Diodes Division
Records 11,281
Page 172/377
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 7A TO277A |
2,970 |
|
Automotive, AEC-Q101 | Schottky | 60V | 7A | 670mV @ 7A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 60V | 560pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A TO263AC |
7,920 |
|
Automotive, AEC-Q101, eSMP® | Standard | 200V | 3A | 1.15V @ 10A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 15µA @ 100V | 67pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A TO263AC |
7,614 |
|
Automotive, AEC-Q101, eSMP® | Standard | 400V | 3A | 1.15V @ 10A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 15µA @ 400V | 67pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A TO263AC |
3,490 |
|
Automotive, AEC-Q101, eSMP® | Standard | 600V | 3A | 1.15V @ 10A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 15µA @ 600V | 67pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 4.8A TO277A |
5,490 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 60V | 4.8A | 620mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3.6mA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
8,244 |
|
- | Avalanche | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 1µA @ 200V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 50V 3A SOD64 |
3,582 |
|
- | Avalanche | 50V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 50V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 3A SOD64 |
8,874 |
|
- | Avalanche | 100V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 100V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 50V 3A SOD64 |
3,366 |
|
- | Avalanche | 50V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 50V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 3A SOD64 |
8,802 |
|
- | Avalanche | 100V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 100V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
8,712 |
|
- | Avalanche | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 1µA @ 200V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2.9A TO277A |
5,040 |
|
Automotive, AEC-Q101, eSMP® | Standard | 100V | 2.9A | 1.05V @ 7A | Standard Recovery >500ns, > 200mA (Io) | 2.6µs | 20µA @ 100V | 76pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2.9A TO277A |
3,276 |
|
Automotive, AEC-Q101, eSMP® | Standard | 100V | 2.9A | 1.05V @ 7A | Standard Recovery >500ns, > 200mA (Io) | 2.6µs | 20µA @ 100V | 76pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2.9A TO277A |
2,844 |
|
Automotive, AEC-Q101, eSMP® | Standard | 200V | 2.9A | 1.05V @ 7A | Standard Recovery >500ns, > 200mA (Io) | 2.6µs | 20µA @ 200V | 76pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2.9A TO277A |
4,914 |
|
Automotive, AEC-Q101, eSMP® | Standard | 200V | 2.9A | 1.05V @ 7A | Standard Recovery >500ns, > 200mA (Io) | 2.6µs | 20µA @ 200V | 76pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2.9A TO277A |
7,200 |
|
Automotive, AEC-Q101, eSMP® | Standard | 400V | 2.9A | 1.05V @ 7A | Standard Recovery >500ns, > 200mA (Io) | 2.6µs | 20µA @ 400V | 76pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2.9A TO277A |
8,640 |
|
Automotive, AEC-Q101, eSMP® | Standard | 400V | 2.9A | 1.05V @ 7A | Standard Recovery >500ns, > 200mA (Io) | 2.6µs | 20µA @ 400V | 76pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2.9A TO277A |
4,356 |
|
Automotive, AEC-Q101, eSMP® | Standard | 600V | 2.9A | 1.05V @ 7A | Standard Recovery >500ns, > 200mA (Io) | 2.6µs | 20µA @ 600V | 76pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 4.6A TO277A |
2,538 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 80V | 4.6A | 660mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.2mA @ 80V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 3.9A TO277A |
7,254 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 120V | 3.9A | 830mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 10A TO277A |
4,914 |
|
Automotive, AEC-Q101 | Schottky | 30V | 10A | 560mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 30V | 750pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 10A TO277A |
4,626 |
|
Automotive, AEC-Q101 | Schottky | 40V | 10A | 560mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 40V | 750pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 10A TO277A |
6,264 |
|
eSMP® | Schottky | 30V | 10A | 560mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 30V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 3.9A TO277A |
8,460 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 120V | 3.9A | 830mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |
3,132 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 5A 200V TO-262AA |
8,946 |
|
- | Schottky | 200V | 5A | 1.6V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 200V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262AA | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
5,472 |
|
- | Avalanche | 200V | 3A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 200V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 3A SOD64 |
7,254 |
|
- | Avalanche | 400V | 3A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 400V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
7,596 |
|
- | Avalanche | 200V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 200V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
8,370 |
|
- | Avalanche | 200V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 200V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |