Toshiba Semiconductor and Storage Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerToshiba Semiconductor and Storage
Records 786
Page 3/27
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
X34 PB-F SMALL LOW ON RESISTANCE |
42,684 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 12V | 5.4A (Ta) | 1.2V, 4.5V | 17mOhm @ 5A, 4.5V | 1V @ 1mA | 33nC @ 4.5V | ±6V | 2700pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 17A 8TSON-ADV |
38,214 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 16mOhm @ 8.5A, 10V | 4V @ 200µA | 19nC @ 10V | ±20V | 1600pF @ 50V | - | 700mW (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 36A 8TSON ADV |
39,870 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 2.5V, 4.5V | 4.7mOhm @ 18A, 4.5V | 1.2V @ 1mA | 65nC @ 5V | ±12V | 4300pF @ 10V | - | 42W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 17A 8TSON |
87,162 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 4.5V, 10V | 11.4mOhm @ 8.5A, 10V | 2.5V @ 200µA | 23nC @ 10V | ±20V | 2000pF @ 30V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 60V 46A DPAK |
21,990 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 60V | 46A (Tc) | 4.5V, 10V | 6.7mOhm @ 23A, 10V | 2.5V @ 300µA | 26nC @ 10V | ±20V | 1990pF @ 30V | - | 66W (Tc) | 175°C | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 150V 9A 8SOP |
104,820 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 150V | 9A (Ta) | 10V | 59mOhm @ 4.5A, 10V | 4V @ 200µA | 7nC @ 10V | ±20V | 600pF @ 75V | - | 1.6W (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 600V 7A DPAK |
17,142 |
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DTMOSV | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | ±30V | 380pF @ 300V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 11.5A DPAK |
18,264 |
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DTMOSV | N-Channel | MOSFET (Metal Oxide) | 600V | 11.5A (Tc) | 10V | 290mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | ±30V | 730pF @ 300V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
156,342 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 4.4mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | ±20V | 5435pF @ 30V | - | 132W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 200V 21A 8-SOP |
143,088 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 200V | 13A (Ta) | 10V | 64mOhm @ 6.5A, 10V | 4V @ 300µA | 11.2nC @ 10V | ±20V | 1100pF @ 100V | - | 1.6W (Ta), 57W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 32A 8-SOP |
79,320 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 32A (Tc) | 10V | 8.8mOhm @ 16A, 10V | 4V @ 500µA | 33nC @ 10V | ±20V | 2800pF @ 50V | - | 1.6W (Ta), 61W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 55A DPAK |
22,380 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 55A (Ta) | 10V | 6.5mOhm @ 27.5A, 10V | 4V @ 500µA | 49nC @ 10V | ±20V | 3280pF @ 10V | - | 157W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 6A TO220SIS |
17,220 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Ta) | 10V | 1.25Ohm @ 3A, 10V | 4V @ 1mA | 16nC @ 10V | ±30V | 800pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 13A TO220SIS |
22,770 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Ta) | 10V | 430mOhm @ 6.5A, 10V | 4V @ 1mA | 40nC @ 10V | ±30V | 2300pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V TO-3PN |
8,016 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 9A (Ta) | 10V | 1.3Ohm @ 4.5A, 10V | 4V @ 900µA | 46nC @ 10V | ±30V | 2000pF @ 25V | - | 250W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 39A TO220-3 |
7,716 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110nC @ 10V | ±30V | 4100pF @ 300V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO- |
6,216 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 57A (Ta) | 10V | 40mOhm @ 28.5A, 10V | 4V @ 2.85mA | 105nC @ 10V | ±30V | 6250pF @ 300V | - | 360W (Tc) | 150°C | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.15A CST3C |
73,422 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 150mA (Ta) | 4.5V, 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | ±20V | 17pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | CST3C | SOT-1123 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.4A |
22,650 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | ±20V | 40pF @ 10V | - | 270mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET NCH 20V 800MA CST3 |
320,646 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 20V | 800mA (Ta) | 1.5V, 4.5V | 235mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | ±8V | 55pF @ 10V | - | 500mW (Ta) | 150°C (TA) | Surface Mount | CST3 | 3-XFDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 6A 6-TSOP-F |
25,494 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 32.5mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | +6V, -8V | 840pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | 6-TSOP-F | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 2A CST3B |
93,162 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 40V | 2A (Ta) | 1.8V, 8V | 215mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | ±12V | 130pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | CST3B | 3-SMD, No Lead |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 2.2A UFM |
22,986 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 30V | 2.2A (Ta) | 2.5V, 4.5V | 100mOhm @ 500mA, 4.5V | 1.1V @ 100µA | - | ±12V | 245pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 3.2A ES6 |
31,608 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 1.5V, 4.5V | 47mOhm @ 2A, 4.5V | 1V @ 1mA | 10.8nC @ 4.5V | ±10V | 510pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 2.3A ES6 |
32,064 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 2.3A (Ta) | 1.8V, 4V | 85mOhm @ 1.5A, 4V | 1V @ 1mA | - | ±12V | 270pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 (1.6x1.6) | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET P CH 20V 3.4A ES6 |
34,650 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 3.4A (Ta) | 1.5V, 4.5V | 59mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | ±8V | 630pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 12A 6-UDFNB |
56,772 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 12A (Ta) | 4.5V, 10V | 11.6mOhm @ 4A, 10V | 2.4V @ 100µA | 7.5nC @ 4.5V | ±20V | 1110pF @ 20V | - | 2.5W (Ta) | 150°C | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 20A 8SOP |
27,234 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Tc) | 10V | 8.9mOhm @ 10A, 10V | 2.3V @ 1mA | 9.8nC @ 10V | ±20V | 820pF @ 15V | - | 1.6W (Ta), 24W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
51,822 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 48A (Tc) | 4.5V, 10V | 9.7mOhm @ 15A, 4.5V | 2.4V @ 200µA | 24nC @ 10V | ±20V | 2040pF @ 20V | - | 69W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 9.4A 8TSON |
46,746 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 9.4A (Tc) | 10V | 33mOhm @ 4.7A, 10V | 4V @ 100µA | 11nC @ 10V | ±20V | 880pF @ 50V | - | 700mW (Ta), 27W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |