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Taiwan Semiconductor Corporation Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerTaiwan Semiconductor Corporation
Records 5,388
Page 86/180
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SK53BHR5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 5A DO214AA
6,300
Automotive, AEC-Q101
Schottky
30V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK54B R5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 5A DO214AA
6,408
-
Schottky
40V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK54BHR5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 5A DO214AA
2,916
Automotive, AEC-Q101
Schottky
40V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK55B R5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 5A DO214AA
7,092
-
Schottky
50V
5A
750mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK55BHR5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 5A DO214AA
7,902
Automotive, AEC-Q101
Schottky
50V
5A
750mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK56BHR5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 5A DO214AA
2,790
Automotive, AEC-Q101
Schottky
60V
5A
750mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SF33G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO201AD
7,830
-
Standard
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
HS5D V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 5A DO214AB
5,508
-
Standard
200V
5A
-
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5F V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 5A DO214AB
5,958
-
Standard
300V
5A
-
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SK310B M4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 3A DO214AA
3,042
-
Schottky
100V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S12GC V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 12A DO214AB
6,030
-
Standard
400V
12A
1.1V @ 12A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 400V
78pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S12JC V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 12A DO214AB
2,430
-
Standard
600V
12A
1.1V @ 12A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 600V
78pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S12KC V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 12A DO214AB
8,298
-
Standard
800V
12A
1.1V @ 12A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 800V
78pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3GBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AA
8,550
Automotive, AEC-Q101
Standard
400V
3A
1.13V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
41pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES3HBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 3A DO214AA
8,460
Automotive, AEC-Q101
Standard
500V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS5G V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 5A DO214AB
2,484
-
Standard
400V
5A
-
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5J V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 5A DO214AB
2,322
-
Standard
600V
5A
-
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SS39 V7G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 3A 90V DO-214AB
2,844
-
Schottky
90V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S10KC M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 10A DO214AB
8,730
-
Standard
800V
10A
1.1V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 800V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S10MC M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 10A DO214AB
4,626
-
Standard
-
10A
1.1V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 1000V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S8GC M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A DO214AB
6,210
-
Standard
400V
8A
985mV @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
48pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S8JC M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A DO214AB
7,164
-
Standard
600V
8A
985mV @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 600V
48pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5K V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 5A DO214AB
5,706
-
Standard
800V
5A
-
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 800V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5M V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 5A DO214AB
2,178
-
Standard
-
5A
-
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 1000V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3FBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO214AA
3,400
Automotive, AEC-Q101
Standard
300V
3A
1.13V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
41pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SF36G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO201AD
5,040
-
Standard
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF31GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO201AD
3,474
Automotive, AEC-Q101
Standard
50V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF32GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
2,214
Automotive, AEC-Q101
Standard
100V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF34GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
3,474
Automotive, AEC-Q101
Standard
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF35GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO201AD
3,454
Automotive, AEC-Q101
Standard
300V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C