Taiwan Semiconductor Corporation Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single

ManufacturerTaiwan Semiconductor Corporation

Records 5,388

Page 84/180

Part Number	Manufacturer	Description	In Stock	Series	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
ES3JBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AA	2,304	Automotive, AEC-Q101	Standard	600V	3A	1.45V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	34pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK320AHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 3A DO214AC	8,982	Automotive, AEC-Q101	Schottky	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SF35G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO201AD	7,722	-	Standard	300V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF36G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO201AD	4,968	-	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
ES3J V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	5,616	-	Standard	600V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3DV M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	7,722	-	Standard	200V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HER301G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO201AD	2,088	-	Standard	50V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER302G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO201AD	6,516	-	Standard	100V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER303G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO201AD	4,806	-	Standard	200V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER304G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO201AD	6,120	-	Standard	300V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER306G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD	6,408	-	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	35pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER307G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO201AD	3,330	-	Standard	800V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	35pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
6A05G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 6A R-6	4,806	-	Standard	50V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A05GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 6A R-6	4,338	Automotive, AEC-Q101	Standard	50V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A100G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 6A R-6	7,902	-	Standard	1000V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A10G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 6A R-6	3,060	-	Standard	100V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A10GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 6A R-6	5,814	Automotive, AEC-Q101	Standard	100V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A20G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A R-6	5,742	-	Standard	200V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A20GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A R-6	8,910	Automotive, AEC-Q101	Standard	200V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A40G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A R-6	4,662	-	Standard	400V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A40GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A R-6	7,686	Automotive, AEC-Q101	Standard	400V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A60G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A R-6	5,130	-	Standard	600V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A60GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A R-6	5,904	Automotive, AEC-Q101	Standard	600V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A80G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 6A R-6	2,196	-	Standard	800V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A80GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 6A R-6	3,294	Automotive, AEC-Q101	Standard	800V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
UG54G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO201AD	8,370	-	Standard	200V	5A	1.05V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
UG56G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO201AD	7,830	-	Standard	400V	5A	1.55V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 400V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
UG58G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO201AD	2,250	-	Standard	600V	5A	2.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	30µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
S10GC M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A DO214AB	6,372	-	Standard	400V	10A	1.1V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S10JC M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A DO214AB	4,752	-	Standard	600V	10A	1.1V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C

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