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Taiwan Semiconductor Corporation Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerTaiwan Semiconductor Corporation
Records 5,388
Page 7/180
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
UG2JA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO214AC
15,834
-
Standard
600V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
2µA @ 600V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
TSP3H150S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 3A TO277A
55,926
-
Schottky
150V
3A
860mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
100µA @ 150V
150pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
UG2JAHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO214AC
18,192
-
Standard
600V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
2µA @ 600V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
1N5408G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 3A DO201AD
54,660
-
Standard
1000V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SK110B R5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 1A DO214AA
104,964
-
Schottky
100V
1A
850mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
RS3J R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
31,512
-
Standard
600V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
10µA @ 600V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S5KBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 5A DO214AA
97,500
-
Standard
800V
5A
1.1V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 800V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SS210 R5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 2A DO214AA
16,968
-
Schottky
100V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2G R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO214AA
28,116
-
Standard
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK315A R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 3A DO214AC
31,278
-
Schottky
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
S4D R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
26,310
-
Standard
200V
4A
1.15V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 200V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S4G R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 4A DO214AB
16,356
-
Standard
400V
4A
1.15V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 400V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3BB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AA
19,314
-
Standard
100V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
80pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS3JB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AA
25,566
-
Standard
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS3M R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 3A DO214AB
32,556
-
Standard
1000V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 1000V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS2K R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 2A DO214AA
25,098
-
Standard
800V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS3MB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 3A DO214AA
20,796
-
Standard
1000V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 1000V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK320A R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 200V 3A DO214AC
25,722
-
Schottky
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 200V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES3D R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
34,182
-
Standard
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES2J R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO214AA
95,472
-
Standard
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S8GC R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A DO214AB
29,424
-
Standard
400V
8A
985mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 400V
48pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SR506 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 5A DO201AD
16,596
-
Schottky
60V
5A
700mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SR520 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 200V 5A DO201AD
22,116
-
Schottky
200V
5A
1.05V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 200V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
TPUH6D S1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 6A TO277A
33,744
-
Standard
200V
6A
1.05V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
10µA @ 200V
50pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
HER308G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 3A DO201AD
26,604
-
Standard
1000V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 1000V
35pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
ES3GB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AA
15,600
-
Standard
400V
3A
1.13V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
41pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK315B R5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 3A DO214AA
91,968
-
Schottky
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK310B R5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 3A DO214AA
109,020
-
Schottky
100V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
MUR340SB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AA
26,388
-
Standard
400V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
TSP15H200S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 200V 15A TO277A
51,354
-
Schottky
200V
15A
890mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 200V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C