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Taiwan Semiconductor Corporation Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerTaiwan Semiconductor Corporation
Records 5,388
Page 4/180
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RS1ML RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 800MA SUB SMA
178,032
-
Standard
1000V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
B0530W RHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 500MA SOD123
24,060
-
Schottky
30V
500mA
430mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
130µA @ 30V
170pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 125°C
RS1JLS RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.2A SOD123
205,680
-
Standard
600V
1.2A
1.3V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
5µA @ 600V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
SS115LW RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 1A SOD123W
94,584
-
Schottky
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 150V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
SS16LWHRVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 1A SOD123W
72,000
-
Schottky
60V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 60V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
SS110LWHRVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 1A SOD123W
47,022
-
Schottky
100V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 100V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
SS115LWHRVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 1A SOD123W
47,328
-
Schottky
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 150V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
S1M R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1A DO214AC
51,030
-
Standard
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
1µA @ 1000V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C
RS1ML R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 800MA SUB SMA
114,606
-
Standard
1000V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS16LW RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 1A SOD123W
243,894
-
Schottky
60V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 60V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
RS1B R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO214AC
62,526
-
Standard
100V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RSFGL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 500MA SUBSMA
53,316
-
Standard
400V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1J R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AC
43,800
-
Standard
600V
1A
1.3V @ 1A
Standard Recovery >500ns, > 200mA (Io)
600ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RSFJL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 500MA SUBSMA
14,640
-
Standard
600V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
UF4007 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1A DO204AL
69,498
-
Standard
1000V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SS12 R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A DO214AC
79,662
-
Schottky
20V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 20V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
SS13 R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A DO214AC
92,082
-
Schottky
30V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
HS1GLW RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SOD123W
528,534
-
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
1µA @ 400V
16pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD123W
-55°C ~ 175°C
SS110LSHRVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 1A SOD123HE
279,372
-
Schottky
100V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 100V
80pF @ 4V, 1MHz
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
SS110LS RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 1A SOD123HE
72,828
-
Schottky
100V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 100V
80pF @ 4V, 1MHz
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
RS1KL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 800MA SUBSMA
107,274
-
Standard
800V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1GL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 800MA SUBSMA
32,736
-
Standard
400V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS115LSHRVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 1A SOD123HE
267,606
-
Schottky
150V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 150V
80pF @ 4V, 1MHz
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
HER102G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
124,746
-
Standard
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SS16 R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 1A DO214AC
51,888
-
Schottky
60V
1A
750mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 60V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
UF1DLW RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SOD123W
100,440
-
Standard
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
1µA @ 200V
40pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
UF1DLWHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SOD123W
108,690
-
Standard
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
1µA @ 200V
40pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
SR206 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 2A DO204AC
36,198
-
Schottky
60V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SS19L R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 1A SUB SMA
31,470
-
Schottky
90V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 90V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
US1M R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1A DO214AC
48,978
-
Standard
1000V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C