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Taiwan Semiconductor Corporation Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerTaiwan Semiconductor Corporation
Records 5,388
Page 69/180
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SS36L RUG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A SUB SMA
6,300
-
Schottky
60V
3A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SK19B M4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 1A DO214AA
3,978
-
Schottky
90V
1A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SS34L R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 3A SUB SMA
7,398
-
Schottky
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
SS36L R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A SUB SMA
8,298
-
Schottky
60V
3A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS3A V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
6,822
-
Standard
50V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 50V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3A V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
8,640
-
Standard
50V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 50V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3B V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
4,932
-
Standard
100V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3D V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
3,348
-
Standard
200V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3F V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO214AB
4,284
-
Standard
300V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3G V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
6,048
-
Standard
400V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3J V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
8,946
-
Standard
600V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3K V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO214AB
5,094
-
Standard
800V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 800V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3M V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
6,138
-
Standard
-
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 1000V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS2GA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1.5A DO214AC
4,842
-
Standard
400V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
S3DB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AA
7,434
-
Standard
200V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 200V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2LD R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO214AA
5,400
-
Standard
200V
2A
940mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2LG R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO214AA
5,904
-
Standard
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2LJ R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO214AA
3,762
-
Standard
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S3BBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AA
5,418
Automotive, AEC-Q101
Standard
100V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 100V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S3DBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AA
4,734
Automotive, AEC-Q101
Standard
200V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 200V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S3GBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AA
2,268
Automotive, AEC-Q101
Standard
400V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 400V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S3KBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO214AA
8,712
Automotive, AEC-Q101
Standard
800V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 800V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK210AHR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 2A DO214AC
7,308
Automotive, AEC-Q101
Schottky
100V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RS3B V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
3,526
-
Standard
100V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 100V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
RS3D V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
4,734
-
Standard
200V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 200V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
RS3G V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
2,358
-
Standard
400V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 400V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
RS3J V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
4,752
-
Standard
600V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
250ns
10µA @ 600V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
1N5401GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
3,528
Automotive, AEC-Q101
Standard
100V
3A
1.1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SS210LHR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 2A SUB SMA
8,244
Automotive, AEC-Q101
Schottky
100V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS215LHR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 2A SUB SMA
5,076
Automotive, AEC-Q101
Schottky
150V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C