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HS3M V6G

HS3M V6G

For Reference Only

Part Number HS3M V6G
PNEDA Part # HS3M-V6G
Description DIODE GEN PURP 3A DO214AB
Manufacturer Taiwan Semiconductor Corporation
Unit Price Request a Quote
In Stock 6,138
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HS3M V6G Resources

Brand Taiwan Semiconductor Corporation
ECAD Module ECAD
Mfr. Part NumberHS3M V6G
CategorySemiconductorsDiodes & RectifiersRectifiers - Single

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HS3M V6G Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)-
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If-
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)75ns
Current - Reverse Leakage @ Vr10µA @ 1000V
Capacitance @ Vr, F50pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AB, SMC
Supplier Device PackageDO-214AB (SMC)
Operating Temperature - Junction-55°C ~ 150°C

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