Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 814/999
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 38A 8SOIC ADV |
8,586 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 38A (Ta) | 4.5V, 10V | 4.2mOhm @ 19A, 10V | 2.3V @ 500µA | 50nC @ 10V | ±20V | 4600pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 34A 8SOP ADV |
3,454 |
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U-MOSV-H | N-Channel | MOSFET (Metal Oxide) | 30V | 34A (Ta) | 4.5V, 10V | 5.3mOhm @ 17A, 10V | 2.3V @ 1mA | 36nC @ 10V | ±20V | 3430pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 44A 8SOP ADV |
3,114 |
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U-MOSV-H | N-Channel | MOSFET (Metal Oxide) | 30V | 44A (Ta) | 4.5V, 10V | 3.2mOhm @ 22A, 10V | 2.3V @ 1mA | 59nC @ 10V | ±20V | 5700pF @ 10V | - | - | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 2.2A PS-8 |
6,174 |
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U-MOSIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 2.2A (Ta) | 4.5V, 10V | 180mOhm @ 1.1A, 10V | 2.3V @ 1mA | 7.5nC @ 10V | ±20V | 360pF @ 10V | - | 840mW (Ta) | 150°C (TJ) | Surface Mount | PS-8 (2.9x2.4) | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A 8-SOP |
5,382 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 3.4mOhm @ 9A, 10V | 2.5V @ 1mA | 56nC @ 10V | ±20V | 2900pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 13A 8-SOP |
4,986 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 80V | 13A (Ta) | 4.5V, 10V | 9.7mOhm @ 6.5A, 10V | 2.3V @ 1mA | 85nC @ 10V | ±20V | 7540pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 35A 8-SOP ADV |
8,496 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 60V | 35A (Ta) | 4.5V, 10V | 6.6mOhm @ 18A, 10V | 2.3V @ 1mA | 90nC @ 10V | ±20V | 7540pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A PS-8 |
6,858 |
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U-MOSV-H | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 12.9mOhm @ 5.5A, 10V | 2.5V @ 1mA | 20nC @ 10V | ±20V | 2150pF @ 10V | - | 840mW (Ta) | 150°C (TJ) | Surface Mount | PS-8 (2.9x2.4) | 8-SMD, Flat Lead |
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ON Semiconductor |
MOSFET N-CH 40V 69A DPAK |
3,400 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 69A (Tc) | 5V, 10V | 8.5mOhm @ 30A, 10V | 3.5V @ 250µA | 45nC @ 10V | ±20V | 2850pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 51A DPAK |
8,586 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 51A (Tc) | 5V, 10V | 9.5mOhm @ 15A, 10V | 3.5V @ 250µA | 80nC @ 10V | ±20V | 1725pF @ 25V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 33A DPAK |
6,156 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 33A (Tc) | 4.5V, 10V | 19mOhm @ 15A, 10V | 2.5V @ 250µA | 38nC @ 10V | ±20V | 860pF @ 25V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 250V 8A TO220FN |
4,536 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 8A (Ta) | 10V | 500mOhm @ 4A, 10V | 4V @ 1mA | 30nC @ 10V | ±30V | 543pF @ 10V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220FN | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 200V 10A TO-220FN |
5,058 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 10A (Ta) | 10V | 360mOhm @ 5A, 10V | 4V @ 1mA | 30nC @ 10V | ±30V | 543pF @ 10V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220FN | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 250V 12A TO-220FN |
2,502 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 12A (Ta) | 10V | 210mOhm @ 6A, 10V | 4V @ 1mA | 62nC @ 10V | ±30V | 1224pF @ 10V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FN | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 200V 15A TO-220FN |
5,490 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 15A (Ta) | 10V | 160mOhm @ 7.5A, 10V | 4V @ 1mA | 64nC @ 10V | ±30V | 1224pF @ 10V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FN | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A SOP8 2-6J1B |
4,464 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 3.2mOhm @ 9A, 10V | 2.3V @ 1mA | 82nC @ 10V | ±20V | 7800pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 300MA SOT-23 |
7,614 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4.5V, 10V | 3Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.6nC @ 10V | ±20V | 20pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 100V 63A TDSON-8 |
3,240 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 9.4A (Ta), 63A (Tc) | 10V | 15.2mOhm @ 25A, 10V | 4V @ 72µA | 29nC @ 10V | ±20V | 1900pF @ 50V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 63A WDSON-2 |
3,580 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta), 63A (Tc) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | 2.2V @ 250µA | 34nC @ 10V | ±20V | 2600pF @ 15V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET P-CH 100V 0.98A SOT-223 |
2,754 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 980mA (Tc) | 10V | 900mOhm @ 980mA, 10V | 4V @ 380µA | 12nC @ 10V | ±20V | 319pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 100V 1A SOT-223 |
4,770 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 1A (Tc) | 4.5V, 10V | 800mOhm @ 1A, 10V | 1V @ 380µA | 16.5nC @ 10V | ±20V | 372pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 60V 620MA SC-59 |
6,174 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 620mA (Ta) | 4.5V, 10V | 800mOhm @ 620mA, 10V | 2V @ 160µA | 6nC @ 10V | ±20V | 176pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 100V 0.36A SC-59 |
8,928 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 360mA (Ta) | 4.5V, 10V | 1.8Ohm @ 360mA, 10V | 1V @ 170µA | 7nC @ 10V | ±20V | 165pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 250V 0.14A SC-59 |
3,204 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 250V | 140mA (Ta) | 2.8V, 10V | 11Ohm @ 140mA, 10V | 1V @ 130µA | 4.8nC @ 10V | ±20V | 109pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 100V 170MA SOT-23 |
4,122 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 4.5V, 10V | 6Ohm @ 170mA, 10V | 2.3V @ 50µA | 2.5nC @ 10V | ±20V | 78pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 600V 0.021A SOT-23 |
2,502 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 21mA (Ta) | 0V, 10V | 500Ohm @ 16mA, 10V | 1.6V @ 8µA | 2.1nC @ 5V | ±20V | 28pF @ 25V | Depletion Mode | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 600V 0.021A SOT-23 |
7,200 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 21mA (Ta) | 0V, 10V | 500Ohm @ 16mA, 10V | 1.6V @ 8µA | 2.1nC @ 5V | ±20V | 28pF @ 25V | Depletion Mode | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 600V 0.021A SOT-23 |
7,596 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 21mA (Ta) | 4.5V, 10V | 500Ohm @ 16mA, 10V | 2.6V @ 8µA | 1nC @ 10V | ±20V | 28pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-23 |
2,250 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Ta) | 4.5V, 10V | 3.5Ohm @ 230mA, 10V | 1.4V @ 250µA | 1.4nC @ 10V | ±20V | 41pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 280MA SOT-323 |
4,950 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 4.5V, 10V | 3.5Ohm @ 220mA, 10V | 1.4V @ 26µA | 1.5nC @ 10V | ±20V | 43pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |