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RDN100N20FU6

RDN100N20FU6

For Reference Only

Part Number RDN100N20FU6
PNEDA Part # RDN100N20FU6
Description MOSFET N-CH 200V 10A TO-220FN
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 5,058
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RDN100N20FU6 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRDN100N20FU6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RDN100N20FU6, RDN100N20FU6 Datasheet (Total Pages: 5, Size: 85.35 KB)
PDFRDN100N20FU6 Datasheet Cover
RDN100N20FU6 Datasheet Page 2 RDN100N20FU6 Datasheet Page 3 RDN100N20FU6 Datasheet Page 4 RDN100N20FU6 Datasheet Page 5

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RDN100N20FU6 Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds543pF @ 10V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FN
Package / CaseTO-220-3 Full Pack

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