Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 729/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 30V 42A TO-220AB |
5,220 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 42A (Tc) | 4.5V, 10V | 12.9mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | ±20V | 1130pF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 20V 6A 6-TSOP |
3,114 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 2.5V, 4.5V | 41mOhm @ 6A, 4.5V | 1.2V @ 40µA | 20nC @ 4.5V | ±12V | 1007pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 20V 4.7A 6-TSOP |
5,868 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 4.7A (Ta) | 2.5V, 4.5V | 67mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 12.4nC @ 4.5V | ±12V | 654pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 30V 11.1A 8-SOIC |
8,262 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 11.1A (Ta) | 4.5V, 10V | 13mOhm @ 11.1A, 10V | 2V @ 42µA | 21nC @ 5V | ±20V | 1280pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC |
3,114 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 7.8mOhm @ 13A, 10V | 2V @ 80µA | 33.7nC @ 5V | ±20V | 2213pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 12.7A 8-SOIC |
8,910 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 12.7A (Ta) | 4.5V, 10V | 10mOhm @ 12.7A, 10V | 2V @ 55µA | 26.2nC @ 5V | ±20V | 1640pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 370MA SOT223 |
8,478 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 370mA (Ta) | 2.8V, 10V | 6Ohm @ 370mA, 10V | 1.8V @ 50µA | 2.4nC @ 10V | ±20V | 70pF @ 25V | - | 1.79W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 240V 350MA SOT223 |
4,698 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 350mA (Ta) | 0V, 10V | 6Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | ±20V | 108pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 60V 1.9A SOT223 |
6,624 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 1.9A (Ta) | 10V | 300mOhm @ 1.9A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 410pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 60V 1.9A SOT223 |
2,916 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 1.9A (Ta) | 4.5V, 10V | 300mOhm @ 1.9A, 10V | 2V @ 460µA | 20nC @ 10V | ±20V | 460pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 1.8A SOT223 |
6,282 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 1.8A (Ta) | 4.5V, 10V | 300mOhm @ 1.8A, 10V | 1.8V @ 400µA | 17nC @ 10V | ±20V | 368pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 60V 1.17A SOT-223 |
2,826 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 1.17A (Ta) | 4.5V, 10V | 800mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8nC @ 10V | ±20V | 160pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 100V 0.68A SOT223 |
5,184 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 680mA (Ta) | 4.5V, 10V | 1.8Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | ±20V | 146pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 250V 0.43A SOT223 |
8,406 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 250V | 430mA (Ta) | 4.5V, 10V | 4Ohm @ 430mA, 10V | 2V @ 370µA | 15.1nC @ 10V | ±20V | 262pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 240V 350MA SOT223 |
7,848 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 350mA (Ta) | 2.8V, 4.5V | 6Ohm @ 350mA, 10V | 1.4V @ 108µA | 6.8nC @ 10V | ±20V | 95pF @ 25V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 250V 0.19A SOT-89 |
8,748 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 250V | 190mA (Ta) | 2.8V, 10V | 12Ohm @ 190mA, 10V | 2V @ 130µA | 6.1nC @ 10V | ±20V | 104pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT89 | TO-243AA |
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Infineon Technologies |
MOSFET N-CH 240V 260MA SOT-89 |
2,016 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 260mA (Ta) | 4.5V, 10V | 6Ohm @ 260mA, 10V | 1.8V @ 108µA | 5.5nC @ 10V | ±20V | 97pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT89-4-2 | TO-243AA |
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Infineon Technologies |
MOSFET N-CH 25V 80A D2PAK |
2,898 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 80A (Tc) | 4.5V, 10V | 4.6mOhm @ 55A, 10V | 2V @ 50µA | 25nC @ 5V | ±20V | 3110pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 50A D2PAK |
2,574 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 5.9mOhm @ 30A, 10V | 2V @ 40µA | 22nC @ 5V | ±20V | 2653pF @ 15V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 560V 4.5A DPAK |
3,544 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 22nC @ 10V | ±20V | 470pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A DPAK |
8,082 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27nC @ 10V | ±20V | 790pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A DPAK |
4,284 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 5.5V @ 350µA | 35nC @ 10V | ±20V | 970pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 25V 35A I-PAK |
2,088 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 25V | 35A (Tc) | 4.5V, 10V | 4mOhm @ 35A, 10V | 2.5V @ 250µA | 73nC @ 10V | ±20V | 3720pF @ 13V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 25V 35A I-PAK |
6,318 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 25V | 35A (Tc) | 4.5V, 10V | 8.5mOhm @ 35A, 10V | 2.5V @ 250µA | 29nC @ 10V | ±20V | 1440pF @ 13V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 25V 35A I-PAK |
6,768 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 25V | 35A (Tc) | 4.5V, 10V | 5.7mOhm @ 35A, 10V | 2.5V @ 250µA | 52nC @ 10V | ±20V | 2610pF @ 13V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 60V 37A DPAK |
8,712 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.4A (Ta), 37A (Tc) | 5V, 10V | 22mOhm @ 32A, 10V | 2V @ 250µA | 34nC @ 10V | ±20V | 1890pF @ 25V | - | 72W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 50V 280MA SOT23-3 |
5,994 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 280mA (Ta) | 1.8V, 2.7V | 3Ohm @ 200mA, 2.7V | 1.2V @ 250µA | - | ±20V | 50pF @ 25V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 200V 0.122A SOT23-5 |
4,968 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 122mA (Ta) | 10V | 28Ohm @ 150mA, 10V | 3.5V @ 1mA | - | ±20V | 100pF @ 25V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-5 | SC-74A, SOT-753 |
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Diodes Incorporated |
MOSFET N-CH 40V 7.2A DPAK |
5,832 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 7.2A (Ta) | 4.5V, 10V | 50mOhm @ 4.5A, 10V | 1V @ 250µA | 17.1nC @ 10V | ±20V | 827pF @ 20V | - | 2.15W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 1A PW-MINI |
6,840 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1A (Ta) | 4V, 10V | 700mOhm @ 500mA, 10V | 2V @ 1mA | 6.3nC @ 10V | ±20V | 140pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | PW-MINI | TO-243AA |