Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPB06N03LAT

IPB06N03LAT

For Reference Only

Part Number IPB06N03LAT
PNEDA Part # IPB06N03LAT
Description MOSFET N-CH 25V 50A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,574
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 22 - Apr 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB06N03LAT Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB06N03LAT
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB06N03LAT, IPB06N03LAT Datasheet (Total Pages: 9, Size: 276.2 KB)
PDFIPB06N03LA G Datasheet Cover
IPB06N03LA G Datasheet Page 2 IPB06N03LA G Datasheet Page 3 IPB06N03LA G Datasheet Page 4 IPB06N03LA G Datasheet Page 5 IPB06N03LA G Datasheet Page 6 IPB06N03LA G Datasheet Page 7 IPB06N03LA G Datasheet Page 8 IPB06N03LA G Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPB06N03LAT Datasheet
  • where to find IPB06N03LAT
  • Infineon Technologies

  • Infineon Technologies IPB06N03LAT
  • IPB06N03LAT PDF Datasheet
  • IPB06N03LAT Stock

  • IPB06N03LAT Pinout
  • Datasheet IPB06N03LAT
  • IPB06N03LAT Supplier

  • Infineon Technologies Distributor
  • IPB06N03LAT Price
  • IPB06N03LAT Distributor

IPB06N03LAT Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2653pF @ 15V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

RSF015N06FRATL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

290mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

2nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

110pF @ 10V

FET Feature

-

Power Dissipation (Max)

800mW (Ta)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

TUMT3

Package / Case

3-SMD, Flat Leads

AOD2210

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

3A (Ta), 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

105mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2065pF @ 100V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NVMYS2D4N04CTWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

30A (Ta), 138A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

3.5V @ 90µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2100pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.9W (Ta), 83W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK4 (5x6)

Package / Case

SOT-1023, 4-LFPAK

JANSR2N7269

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/603

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

12V

Rds On (Max) @ Id, Vgs

110mOhm @ 26A, 12V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 12V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 150°C

Mounting Type

Through Hole

Supplier Device Package

TO-254AA

Package / Case

TO-254-3, TO-254AA (Straight Leads)

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

700mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

17Ohm @ 375mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

7.8nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

260pF @ 25V

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

ISL3152EIPZ

ISL3152EIPZ

Renesas Electronics America Inc.

IC TRANSCEIVER HALF 1/1 8DIP

MAX3087EESA+

MAX3087EESA+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 8SOIC

ECS-327SMO-TR

ECS-327SMO-TR

ECS

XTAL OSC XO 32.7680KHZ CMOS SMD

ADG1433YRUZ

ADG1433YRUZ

Analog Devices

IC SWITCH TRIPLE SPDT 16TSSOP

NIS5135MN1TXG

NIS5135MN1TXG

ON Semiconductor

IC ELECTRONIC FUSE 10DFN

ADG419BRZ

ADG419BRZ

Analog Devices

IC SWITCH SPDT 8SOIC

MMBD7000LT1G

MMBD7000LT1G

ON Semiconductor

DIODE ARRAY GP 100V 200MA SOT23

74ACTQ245QSC

74ACTQ245QSC

ON Semiconductor

IC TXRX NON-INVERT 5.5V 20QSOP

PIC18F6527-I/PT

PIC18F6527-I/PT

Microchip Technology

IC MCU 8BIT 48KB FLASH 64TQFP

PME271Y447MR30

PME271Y447MR30

KEMET

CAP FILM 4700PF 20% 1KVDC RADIAL

S558-5999-M8-F

S558-5999-M8-F

Bel Fuse

MODULE XFRMR LAN GIGABIT 24P SMD

SMBJ5.0A-13-F

SMBJ5.0A-13-F

Diodes Incorporated

TVS DIODE 5V 9.2V SMB