Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 669/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 150V 24A DPAK |
5,724 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 24A (Tc) | 10V | 95mOhm @ 14A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 890pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 62A D2PAK |
5,562 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 62A (Tc) | 10V | 12.6mOhm @ 48A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 3270pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 30A DPAK |
7,776 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 5V, 10V | 14mOhm @ 30A, 10V | 3V @ 250µA | 92nC @ 10V | ±16V | 1870pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 14A I-PAK |
7,506 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 115mOhm @ 8.4A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | 740pF @ 25V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 100V 32A DPAK |
5,292 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 32A (Tc) | 10V | 44mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | ±20V | 1960pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A DPAK |
7,812 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 13mOhm @ 30A, 10V | 4V @ 250µA | 93nC @ 10V | ±20V | 2030pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 17A DPAK |
4,356 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 17A (Tc) | 10V | 165mOhm @ 10A, 10V | 5.5V @ 250µA | 41nC @ 10V | ±30V | 910pF @ 25V | - | 3W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 42A I-PAK |
2,358 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 42A (Tc) | 10V | 5.5mOhm @ 42A, 10V | 4V @ 250µA | 89nC @ 10V | ±20V | 2950pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 100V 48A I-PAK |
4,464 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 48A (Tc) | 10V | 25mOhm @ 29A, 10V | 5.5V @ 250µA | 89nC @ 10V | ±20V | 3430pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 80V 70A I-PAK |
2,322 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 70A (Tc) | 10V | 14mOhm @ 18A, 10V | 5.5V @ 250µA | 94nC @ 10V | ±20V | 3510pF @ 25V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 60V 39A TO220FP |
3,276 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 39A (Tc) | 10V | 12mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 1985pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 6.8A TO220FP |
4,446 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 6.8A (Tc) | 10V | 380mOhm @ 4.1A, 10V | 5V @ 250µA | 92nC @ 10V | ±30V | 2220pF @ 25V | - | 46W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 100V 59A D2PAK |
6,930 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 59A (Tc) | 10V | 18mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 2900pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 48A DPAK |
4,302 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 48A (Tc) | 10V | 25mOhm @ 29A, 10V | 5.5V @ 250µA | 89nC @ 10V | ±20V | 3430pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 500V 4.7A TO220FP |
4,932 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 4.7A (Tc) | 10V | 800mOhm @ 2.4A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 1000pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 40V 170A TO-262 |
5,796 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 170A (Tc) | 10V | 3.6mOhm @ 130A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 5890pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 30V 75A TO-262 |
8,568 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 3.3mOhm @ 140A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 5730pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 75A TO-262 |
8,676 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 14mOhm @ 45A, 10V | 5.5V @ 250µA | 170nC @ 10V | ±20V | 6160pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 20V 180A TO-262 |
7,794 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 180A (Tc) | 4.5V, 10V | 4mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | ±20V | 5090pF @ 10V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 80A D2PAK |
2,376 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 15mOhm @ 45A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 3830pF @ 25V | - | 260W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 135A TO-262 |
2,178 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 135A (Tc) | 10V | 4.7mOhm @ 104A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 5110pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 30V 75A D2PAK |
3,544 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 3.3mOhm @ 140A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 5730pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 106A TO-262 |
4,680 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 106A (Tc) | 10V | 7mOhm @ 82A, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 5310pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 80V 95A TO-220AB |
7,218 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 95A (Tc) | 10V | 10mOhm @ 57A, 10V | 5.5V @ 250µA | 140nC @ 10V | ±20V | 5450pF @ 25V | - | 3.8W (Ta), 210W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 23A TO-247AC |
2,160 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 23A (Tc) | 10V | 125mOhm @ 14A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 2040pF @ 25V | - | 220W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 55V 135A D2PAK |
5,274 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 135A (Tc) | 10V | 4.7mOhm @ 104A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 5110pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 106A D2PAK |
4,590 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 106A (Tc) | 10V | 7mOhm @ 82A, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 5310pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC |
3,240 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 370mOhm @ 8.4A, 10V | 5V @ 250µA | 77nC @ 10V | ±30V | 2260pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 16A TO-220AB |
4,734 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 460mOhm @ 9A, 10V | 5V @ 250µA | 100nC @ 10V | ±30V | 2720pF @ 25V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 44A TO-247AC |
7,200 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 44A (Tc) | 10V | 60mOhm @ 25A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 3860pF @ 25V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |