IRFR3412PBF
For Reference Only
| Part Number | IRFR3412PBF |
| PNEDA Part # | IRFR3412PBF |
| Description | MOSFET N-CH 100V 48A DPAK |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,302 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 17 - Apr 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRFR3412PBF Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IRFR3412PBF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IRFR3412PBF Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 29A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 89nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3430pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 490mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id 1.05V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.16nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 78pF @ 25V FET Feature - Power Dissipation (Max) 360mW (Ta), 2.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DFN1006-3 Package / Case SC-101, SOT-883 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 12A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 146mOhm @ 6A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V FET Feature - Power Dissipation (Max) 1.28W (Ta), 56.6W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
