Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 562/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
HIGH POWER_NEW |
3,888 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
HIGH POWER_NEW |
2,700 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 500V 40A TO-268 |
6,966 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 40A (Tc) | 10V | 140mOhm @ 500mA, 10V | 4.5V @ 4mA | 130nC @ 10V | ±30V | 3800pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 200V 160A TO-264 |
3,168 |
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MegaMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 160A (Tc) | 10V | 13mOhm @ 500mA, 10V | 4V @ 250µA | 415nC @ 10V | ±20V | 12900pF @ 25V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH |
3,096 |
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- | N-Channel | MOSFET (Metal Oxide) | 2200V | 600mA (Tc) | 10V | 80Ohm @ 300mA, 10V | 4V @ 250µA | 10.4nC @ 10V | ±20V | 290pF @ 25V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247HV | TO-247-3 Variant |
|
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|
Microsemi |
MOSFET N-CH 600V 60A D3PAK |
7,956 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.9V @ 3mA | 190nC @ 10V | ±30V | 7200pF @ 25V | Super Junction | 431W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 500V 33A TO-264 |
4,662 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 33A (Tc) | 10V | 170mOhm @ 500mA, 10V | 4V @ 250µA | 250nC @ 10V | ±20V | 4900pF @ 25V | - | 416W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 1000V 18A ISOPLUS247 |
7,686 |
|
HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 18A (Tc) | 10V | 340mOhm @ 16A, 10V | 6.5V @ 1mA | 225nC @ 10V | ±30V | 14200pF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 600V 47A ISOPLUS247 |
6,606 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190nC @ 10V | ±20V | 6800pF @ 100V | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 500V 24A TO-247 |
8,064 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 24A (Tc) | 20V | 300mOhm @ 500mA, 20V | 5V @ 250µA | 160nC @ 20V | ±30V | 2500pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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|
Microsemi |
MOSFET N-CH 800V 43A T-MAX |
5,652 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 43A (Tc) | 10V | 210mOhm @ 20A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8070pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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IXYS |
MOSFET N-CH 500V 44A TO-264AA |
4,986 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 120mOhm @ 22A, 10V | 4V @ 4mA | 190nC @ 10V | ±20V | 7000pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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|
ON Semiconductor |
MOSFET N-CH 650V 75A |
8,568 |
|
SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 75A (Tc) | 10V | 25mOhm @ 37.5A, 10V | 4.5V @ 3mA | 236nC @ 10V | ±30V | 7330pF @ 400V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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|
Infineon Technologies |
HIGH POWER_NEW |
5,688 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 500V 80A PLUS247 |
6,678 |
|
HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 500V | 80A (Tc) | 10V | 65mOhm @ 40A, 10V | 5V @ 8mA | 197nC @ 10V | ±30V | 12700pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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|
Microsemi |
MOSFET N-CH 650V 97A TO-264 |
4,140 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 97A (Tc) | 10V | 41mOhm @ 48.5A, 10V | 3.5V @ 2.96mA | 300nC @ 10V | ±20V | 7650pF @ 25V | - | 862W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 200V 156A ISOPLUS247 |
5,868 |
|
GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 156A (Tc) | 10V | 8mOhm @ 60A, 10V | 5V @ 8mA | 378nC @ 10V | ±20V | 28000pF @ 25V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS247™ | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 47A TO-247 |
7,344 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 4V @ 2mA | 650nC @ 10V | ±20V | - | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXKH) | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 10A ISOPLUS247 |
3,600 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 10A (Tc) | 10V | 1.1Ohm @ 6A, 10V | 5.5V @ 4mA | 90nC @ 10V | ±20V | 2900pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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Microsemi |
MOSFET N-CH 800V 41A T-MAX |
2,124 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 41A (Tc) | 10V | 240mOhm @ 20A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8070pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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MICROSS/On Semiconductor |
DIE MOSFET N-CH 200V UNIFET |
6,876 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 1200V 20A ISOPLUS247 |
6,264 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 20A (Tc) | 10V | 750mOhm @ 500mA, 10V | 4.5V @ 8mA | 160nC @ 10V | ±30V | 7400pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 40A ISOPLUS247 |
2,214 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 40A (Tc) | 10V | 110mOhm @ 24A, 10V | 4V @ 4mA | 190nC @ 10V | ±20V | 7000pF @ 25V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 300V 110A TO-264 |
6,156 |
|
MegaMOS™ | N-Channel | MOSFET (Metal Oxide) | 300V | 110A (Tc) | 10V | 26mOhm @ 500mA, 10V | 4V @ 250µA | 390nC @ 10V | ±20V | 7800pF @ 25V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 500V 48A TO-264AA |
4,698 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 48A (Tc) | 10V | 100mOhm @ 24A, 10V | 4V @ 8mA | 270nC @ 10V | ±20V | 8400pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 500V 48A TO-264 |
8,136 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 48A (Tc) | 10V | 100mOhm @ 24A, 10V | 4V @ 4mA | 190nC @ 10V | ±20V | 7000pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
250V/150A ULTRA JUNCTION X3-CLAS |
7,992 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 150A (Tc) | 10V | 9mOhm @ 75A, 10V | 4.5V @ 4mA | 154nC @ 10V | ±20V | 10400pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268HV | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 1200V 20A TO-264 |
3,598 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 20A (Tc) | 10V | 750mOhm @ 500mA, 10V | 4.5V @ 8mA | 160nC @ 10V | ±30V | 7400pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 800V 27A PLUS 247 |
2,124 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 27A (Tc) | 10V | 320mOhm @ 500mA, 10V | 4.5V @ 4mA | 170nC @ 10V | ±20V | 7600pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 150A TO-264AA |
8,712 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 150A (Tc) | 10V | 12mOhm @ 75A, 10V | 4V @ 8mA | 360nC @ 10V | ±20V | 9000pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |