Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 497/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Diodes Incorporated |
MOSFET BVDSS: 651V 800V TO251 |
5,670 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 700V | 7A (Tc) | 10V | 900mOhm @ 1.5A, 10V | 4V @ 250µA | 18.4nC @ 10V | ±30V | 603pF @ 50V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3, IPak, Short Leads |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO-262 |
3,816 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27nC @ 10V | ±20V | 790pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH TO263-7 |
2,304 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 4.5V, 10V | 1.5mOhm @ 100A, 10V | 2.2V @ 110µA | 190nC @ 10V | +20V, -16V | 14950pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 900V TO220-3 |
6,552 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 900V TO-220 |
5,796 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 12A TO-220SIS |
6,444 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Ta) | 10V | 550mOhm @ 6A, 10V | 4V @ 1mA | 38nC @ 10V | ±30V | 1800pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 35A TO-220AB |
8,208 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO263-3 |
2,952 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 90A, 10V | 2.2V @ 90µA | 170nC @ 10V | ±16V | 13000pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 30V 9A PPAK SO-8 |
2,790 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 8.25mOhm @ 15A, 10V | 1.8V @ 250µA | 19nC @ 4.5V | ±12V | 1900pF @ 15V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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IXYS |
MOSFET N-CH 1200V 0.2A DPAK |
2,610 |
|
Polar™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 200mA (Tc) | 10V | 75Ohm @ 500mA, 10V | 4V @ 100µA | 4.7nC @ 10V | ±20V | 104pF @ 25V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 46A 300A 5DFN |
3,438 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 46A (Ta), 300A (Tc) | 10V | 0.92mOhm @ 50A, 10V | 3.5V @ 250µA | 86nC @ 10V | ±20V | 6100pF @ 25V | - | 3.9W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 7.5A TO-220SIS |
3,492 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 7.5A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 59A D2PAK |
7,038 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 59A (Tc) | 10V | 25mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114nC @ 10V | ±30V | 2450pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH |
8,964 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 1.4A (Tc) | 10V | 13Ohm @ 700mA, 10V | 4.5V @ 100µA | 24.8nC @ 10V | ±30V | 666pF @ 25V | - | 86W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 15A TO263 |
8,748 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 290mOhm @ 7.5A, 10V | 4V @ 250µA | 17.2nC @ 10V | ±30V | 841pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 173A TO262 |
8,352 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 173A (Tc) | 6V, 10V | 3.3mOhm @ 100A, 10V | 3.7V @ 150µA | 210nC @ 10V | ±20V | 7020pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 131A D2PAK |
6,048 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 131A (Tc) | 10V | 5.3mOhm @ 101A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 5480pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 19A TO252 |
7,362 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 19A (Tc) | 6V, 10V | 90mOhm @ 5A, 10V | 4V @ 250µA | 51nC @ 10V | ±20V | 1800pF @ 25V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Sanken |
MOSFET N-CH 450V TO-220F |
4,590 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 7A (Ta) | 10V | 1.1Ohm @ 3.5A, 10V | 4V @ 1µA | - | ±30V | 720pF @ 10V | - | 35W (Tc) | - | Through Hole | TO-220F | TO-220-3 Full Pack |
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Microchip Technology |
MOSFET P-CH 500V 0.054A TO92-3 |
4,770 |
|
- | P-Channel | MOSFET (Metal Oxide) | 500V | 54mA (Tj) | 5V, 10V | 125Ohm @ 10mA, 10V | 4.5V @ 1mA | - | ±20V | 70pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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STMicroelectronics |
MOSFET N-CH 24V 80A DPAK |
5,742 |
|
STripFET™ | N-Channel | MOSFET (Metal Oxide) | 24V | 80A (Tc) | 5V, 10V | 5mOhm @ 40A, 10V | 1V @ 250µA | 17nC @ 5V | ±20V | 2070pF @ 15V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRANSISTOR N-CH |
5,832 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 120A TO220 |
3,636 |
|
AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 6V, 10V | 4.4mOhm @ 20A, 10V | 3.3V @ 250µA | 135nC @ 10V | ±20V | 7085pF @ 50V | - | 326W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3 |
8,424 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 6.7mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | ±20V | 3160pF @ 25V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V TO220-3 |
6,192 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 69A (Tc) | 6V, 10V | 4mOhm @ 69A, 10V | 3.3V @ 50µA | 44nC @ 10V | ±20V | 3375pF @ 30V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
8,010 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 160A (Ta) | 6V, 10V | 2.4mOhm @ 80A, 10V | 3.5V @ 1mA | 122nC @ 10V | ±20V | 10100pF @ 10V | - | 375W (Tc) | 175°C | Surface Mount | TO-220SM(W) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
5,238 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 4V, 5V | 200mOhm @ 4.6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
2,142 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 4V, 5V | 200mOhm @ 4.6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 41A SO8FL |
7,092 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 41A (Ta), 270A (Tc) | 4.5V, 10V | 1.1mOhm @ 50A, 10V | 2V @ 250µA | 8.6nC @ 4.5V | ±20V | 5700pF @ 20V | - | 3.2W (Ta), 140W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
-40V4.2MOHMSINGLE |
7,524 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta), 140A (Tc) | 4.5V, 10V | 4.2mOhm @ 50A, 10V | 2.6V @ 1mA | 136nC @ 10V | ±20V | 7400pF @ 20V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |