Transistors - FETs, MOSFETs - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 495/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
7,434 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 10.7mOhm @ 40A, 10V | 2V @ 93µA | 80nC @ 10V | ±20V | 2075pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 10V DRIVE LPTS |
3,744 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 7A (Ta) | 10V | 1.05Ohm @ 3.5A, 10V | 4.5V @ 1mA | 13nC @ 10V | ±30V | 500pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET N-CH 40V 46A 300A 5DFN |
4,176 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 46A (Ta), 300A (Tc) | 10V | 0.92mOhm @ 50A, 10V | 3.5V @ 250µA | 86nC @ 10V | ±20V | 6100pF @ 25V | - | 3.9W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
Diodes Incorporated |
MOSFET NCH 60V 130A TO220AB |
8,820 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 130A (Tc) | 10V | 8mOhm @ 20A, 10V | 4V @ 250µA | 21nC @ 10V | 20V | 2596pF @ 30V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Diodes Incorporated |
MOSFET NCH 40V 100A TO220AB |
6,516 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4.7mOhm @ 50A, 10V | 4V @ 250µA | 49.1nC @ 10V | ±20V | 3062pF @ 20V | - | 2.8W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 80V 220A PSOF8 |
7,830 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 220A (Tc) | 10V | 3mOhm @ 80A, 10V | 4V @ 250µA | 112nC @ 10V | ±20V | 6320pF @ 40V | - | 300W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 80A TO262-3 |
4,230 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 10.7mOhm @ 40A, 10V | 2V @ 93µA | 80nC @ 10V | ±20V | 2075pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
ON Semiconductor |
NFET SO8FL 60V 69A 16MOHM |
8,856 |
|
Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 60V | 10A (Ta), 64A (Tc) | 4.5V, 10V | 14mOhm @ 17A, 10V | 2.5V @ 250µA | 83nC @ 10V | ±20V | 4400pF @ 25V | - | 3.8W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 80A TO-220AB |
3,402 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta), 80A (Tc) | 10V | 7mOhm @ 80A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 3000pF @ 25V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8 |
2,952 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 3.1mOhm @ 15A, 10V | 2.5V @ 250µA | 125nC @ 10V | ±20V | 5370pF @ 15V | - | 5.2W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
|
|
ON Semiconductor |
MOSFET N-CH 250V 44A TO-220F |
3,526 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 44A (Tc) | 10V | 69mOhm @ 22A, 10V | 5V @ 250µA | 61nC @ 10V | ±30V | 2870pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F (LG-Formed) | TO-220-3 Full Pack, Formed Leads |
|
|
|
ON Semiconductor |
TRENCH 6 40V SL NFET |
7,254 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 41A (Ta), 235A (Tc) | 10V | 1.3mOhm @ 50A, 10V | 3.5V @ 170µA | 65nC @ 10V | ±20V | 4300pF @ 25V | - | 3.8W (Ta), 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | 8-PowerSMD, Gull Wing |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 183A TO262 |
8,316 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 183A (Tc) | 6V, 10V | 3.5mOhm @ 100A, 10V | 3.7V @ 250µA | 270nC @ 10V | ±20V | 10150pF @ 25V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Diodes Incorporated |
MOSFET N-CH 800V 7A ITO220AB |
3,384 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 2Ohm @ 2.5A, 10V | 4V @ 250µA | 35.4nC @ 10V | ±30V | 1253pF @ 25V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Nexperia |
MOSFET N-CH 60V TO220AB |
8,154 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.2mOhm @ 25A, 10V | 4V @ 1mA | 192nC @ 10V | ±20V | 13500pF @ 30V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 40V 120A TO-263AB |
7,650 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 25A (Ta), 120A (Tc) | 10V | 3mOhm @ 80A, 10V | 4V @ 250µA | 185nC @ 10V | ±20V | 9310pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 4VSON |
8,244 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 19.2A (Tc) | 10V | 210mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37nC @ 10V | ±20V | 1750pF @ 100V | - | 151W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 5A TO-220SIS |
3,042 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 5A (Ta) | 10V | 1.43Ohm @ 2.5A, 10V | 4.4V @ 1mA | 16nC @ 10V | ±30V | 700pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Vishay Siliconix |
MOSFET N-CH 220V 8.4A 1212-8 |
8,172 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 220V | 8.4A (Tc) | 4.5V, 10V | 320mOhm @ 2.3A, 10V | 4V @ 250µA | 21nC @ 10V | ±20V | 645pF @ 15V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
|
|
|
Nexperia |
MOSFET N-CH 150V 55.5A D2PAK |
3,222 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 55.5A (Tc) | 10V | 30mOhm @ 25A, 10V | 4V @ 1mA | 98nC @ 10V | ±20V | 3680pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH TO263-7 |
3,690 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 140A (Tc) | 10V | 4.2mOhm @ 100A, 10V | 4V @ 100µA | 80nC @ 10V | ±20V | 5500pF @ 25V | - | 161W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
|
|
|
ON Semiconductor |
FET 100V 8.0 MOHM PQFN56 |
4,968 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 12.4A (Ta), 60A (Tc) | 6V, 10V | 8mOhm @ 13A, 10V | 4V @ 250µA | 55nC @ 10V | ±20V | 3000pF @ 50V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 25V 32A 8PQFN |
3,762 |
|
Dual Cool™, PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 32A (Ta), 40A (Tc) | 4.5V, 10V | 2mOhm @ 27A, 10V | 2.5V @ 1mA | 68nC @ 10V | ±20V | 4410pF @ 13V | - | 3W (Ta), 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool ™ 33 | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 36A D2PAK |
5,580 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1770pF @ 25V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
PMOS D2PAK 40V 110X72 MIL |
4,446 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 120A TO262 |
3,562 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 3.9V @ 100µA | 161nC @ 10V | ±20V | 5193pF @ 25V | - | 163W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 250V 450MA 4-DIP |
5,166 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 450mA (Ta) | 10V | 2Ohm @ 270mA, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
|
|
|
Vishay Siliconix |
MOSFET P-CH 50V 1.1A 4-DIP |
5,634 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 1.1A (Tc) | 10V | 500mOhm @ 580mA, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 240pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
|
|
|
Vishay Siliconix |
MOSFET N-CH 60V 7.7A I-PAK |
3,636 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 4V, 5V | 200mOhm @ 4.6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 30V 11A 8-SOIC |
3,222 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | - | 4.5V, 10V | 12mOhm @ 11A, 10V | 800mV @ 250µA (Min) | 20nC @ 5V | ±25V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |