Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 45/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Renesas Electronics America |
MOSFET N-CH 1500V 4A TO-3P |
12,636 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1500V | 4A (Ta) | 15V | 7Ohm @ 2A, 15V | - | - | ±20V | 1700pF @ 10V | - | 125W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO247-3 |
7,752 |
|
CoolMOS™ CFD7 | N-Channel | MOSFET (Metal Oxide) | 650V | 31A (Tc) | 10V | 70mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67nC @ 10V | ±20V | 2721pF @ 400V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 35A TO220FP |
16,008 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Tc) | 10V | 78mOhm @ 19.5A, 10V | 5V @ 250µA | 91nC @ 10V | ±25V | 3375pF @ 100V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET NCH 650V 21A TO247N |
45,870 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 650V | 21A (Tc) | 18V | 156mOhm @ 6.7A, 18V | 5.6V @ 3.33mA | 38nC @ 18V | +22V, -4V | 460pF @ 500V | - | 103W (Tc) | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 200V 88A TO220-3 |
14,808 |
|
OptimWatt™ | N-Channel | MOSFET (Metal Oxide) | 200V | 88A (Tc) | 10V | 10.7mOhm @ 88A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 7100pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 38.8A T0247 |
21,390 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 74mOhm @ 19.4A, 10V | 4.5V @ 1.9mA | 135nC @ 10V | ±30V | 4100pF @ 300V | - | 270W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 52A TO247-4 |
8,220 |
|
MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 600V | 52A (Tc) | 10V | 55mOhm @ 26A, 10V | 4V @ 250µA | 91nC @ 10V | ±25V | 3750pF @ 100V | - | 350W (Tc) | 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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STMicroelectronics |
MOSFET N-CH 650V 35A TO247 |
16,500 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Tc) | 10V | 78mOhm @ 19.5A, 10V | 5V @ 250µA | 91nC @ 10V | ±20V | 3375pF @ 100V | - | 210W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
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Infineon Technologies |
MOSFET N-CH 600V 53A TO247 |
12,954 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 53A (Tc) | 10V | 70mOhm @ 25.8A, 10V | 3.5V @ 1.72mA | 170nC @ 10V | ±20V | 3800pF @ 100V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
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|
Cree/Wolfspeed |
MOSFET N-CH 1200V 19A TO-247 |
39,336 |
|
Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 19A (Tc) | 20V | 196mOhm @ 10A, 20V | 2.5V @ 500µA | 32.6nC @ 20V | +25V, -10V | 527pF @ 800V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET P-CH 100V 90A TO-247 |
14,940 |
|
PolarP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 90A (Tc) | 10V | 25mOhm @ 45A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 5800pF @ 25V | - | 462W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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|
IXYS |
MOSFET P-CH 200V 48A TO-247 |
22,320 |
|
PolarP™ | P-Channel | MOSFET (Metal Oxide) | 200V | 48A (Tc) | 10V | 85mOhm @ 500mA, 10V | 4.5V @ 250µA | 103nC @ 10V | ±20V | 5400pF @ 25V | - | 462W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
|
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IXYS |
MOSFET P-CH 500V 20A TO-247 |
8,604 |
|
PolarP™ | P-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 450mOhm @ 10A, 10V | 4V @ 250µA | 103nC @ 10V | ±20V | 5120pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 1KV 6A TO-247AD |
15,072 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 6A (Tc) | 10V | 2Ohm @ 500mA, 10V | 4.5V @ 2.5mA | 130nC @ 10V | ±20V | 2600pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 1500V 7A TO-247 |
17,184 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 1500V | 7A (Tc) | 10V | 1.9Ohm @ 3.5A, 10V | 5V @ 100µA | 47nC @ 10V | ±30V | 1360pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Cree/Wolfspeed |
MOSFET N-CH 1000V 22A D2PAK-7 |
18,252 |
|
C3M™ | N-Channel | SiCFET (Silicon Carbide) | 1000V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 21.5nC @ 15V | +15V, -4V | 350pF @ 600V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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STMicroelectronics |
MOSFET N-CH 1KV 13A TO-247 |
17,208 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 13A (Tc) | 10V | 700mOhm @ 6.5A, 10V | 4.5V @ 150µA | 266nC @ 10V | ±30V | 6000pF @ 25V | - | 350W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 29A TO-220AB |
12,144 |
|
FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 110mOhm @ 14.5A, 10V | 5V @ 250µA | 80.4nC @ 10V | ±25V | 2785pF @ 50V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 26A TO-247AD |
7,572 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 200mOhm @ 13A, 10V | 4V @ 4mA | 160nC @ 10V | ±20V | 4200pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Transphorm |
GANFET N-CH 650V 16A TO220AB |
10,656 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 650V | 16A (Tc) | 10V | 180mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2nC @ 4.5V | ±18V | 720pF @ 480V | - | 81W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 200V 50A TO-247AD |
13,512 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 50A (Tc) | 10V | 45mOhm @ 25A, 10V | 4V @ 4mA | 220nC @ 10V | ±20V | 4400pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Cree/Wolfspeed |
MOSFET N-CH 900V 36A TO247-3 |
75,426 |
|
C3M™ | N-Channel | SiCFET (Silicon Carbide) | 900V | 36A (Tc) | 15V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30.4nC @ 15V | +18V, -8V | 660pF @ 600V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 50A |
12,408 |
|
MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 60mOhm @ 25A, 10V | 5V @ 250µA | 90nC @ 10V | ±25V | 4100pF @ 100V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET NCH 1.2KV 17A TO247N |
20,436 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 17A (Tc) | 18V | 208mOhm @ 5A, 18V | 5.6V @ 2.5mA | 42nC @ 18V | +22V, -4V | 398pF @ 800V | - | 103W (Tc) | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 66A |
11,340 |
|
Automotive, AEC-Q101, MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 66A (Tc) | 10V | 42mOhm @ 33A, 10V | 5V @ 250µA | 121nC @ 10V | ±25V | 5508pF @ 100V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 76A TO247-3 |
14,064 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 76A (Tc) | 10V | 37mOhm @ 29.5A, 10V | 4V @ 1.48mA | 121nC @ 10V | ±20V | 5243pF @ 400V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Cree/Wolfspeed |
MOSFET N-CH 900V 35A D2PAK-7 |
141,516 |
|
C3M™ | N-Channel | SiCFET (Silicon Carbide) | 900V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30nC @ 15V | +19V, -8V | 660pF @ 600V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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IXYS |
MOSFET N-CH 200V 16A TO-268 |
7,416 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 16A (Tc) | - | 73mOhm @ 8A, 0V | - | 208nC @ 5V | ±20V | 5500pF @ 25V | Depletion Mode | 695W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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STMicroelectronics |
MOSFET N-CH 600V 66A |
7,356 |
|
MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 66A (Tc) | 10V | 42mOhm @ 33A, 10V | 5V @ 250µA | 121nC @ 10V | ±25V | 5508pF @ 100V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 42A TO-220 |
18,216 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 42A (Tc) | 10V | 63mOhm @ 21A, 10V | 5V @ 250µA | 98nC @ 10V | ±25V | 4200pF @ 100V | - | 250W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |