IPW60R070C6FKSA1
For Reference Only
| Part Number | IPW60R070C6FKSA1 |
| PNEDA Part # | IPW60R070C6FKSA1 |
| Description | MOSFET N-CH 600V 53A TO247 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 12,954 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 3 - Apr 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPW60R070C6FKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPW60R070C6FKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPW60R070C6FKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 25.8A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1.72mA |
| Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 391W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | TO-247-3 |
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Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 580A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.8mOhm @ 430A, 10V Vgs(th) (Max) @ Id 4V @ 50mA Gate Charge (Qg) (Max) @ Vgs 2750nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package Y3-Li Package / Case Y3-Li |
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 125mOhm @ 15A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V Vgs (Max) +30V, -20V Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 25V FET Feature Super Junction Power Dissipation (Max) 34.7W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.2mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3789pF @ 25V FET Feature - Power Dissipation (Max) 203W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
