Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 388/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CHAN 600V TO-247AC |
5,022 |
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EL | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 120mOhm @ 15A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 2565pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
200V/90A ULTRA JUNCTION X3-CLASS |
6,204 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 90A (Tc) | 10V | 12.8mOhm @ 45A, 10V | 4.5V @ 1.5mA | 78nC @ 10V | ±20V | 5420pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 650V 28A TO-220AB |
3,816 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 28A (Tc) | 10V | 117mOhm @ 14A, 10V | 4V @ 250µA | 146nC @ 10V | ±30V | 3249pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET E SERIES 600V TO247AC |
8,604 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 100mOhm @ 13A, 10V | 5V @ 250µA | 50nC @ 10V | ±30V | 1851pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 28A TO-247AC |
4,266 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 123mOhm @ 14A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 2714pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 33A TO-247AD |
3,186 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150nC @ 10V | ±30V | 3508pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-3P-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 34A |
4,626 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 87mOhm @ 17A, 10V | 4V @ 250µA | 55nC @ 10V | ±25V | 2370pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOWATT-218FX | ISOWATT218FX |
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STMicroelectronics |
MOSFET N-CH 650V 33A TO-220FP |
3,474 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 33A (Tc) | 10V | 79mOhm @ 16.5A, 10V | 5V @ 250µA | 100nC @ 10V | ±25V | 4650pF @ 100V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 650V 33A I2PAK |
2,034 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 33A (Tc) | 10V | 79mOhm @ 16.5A, 10V | 5V @ 250µA | 100nC @ 10V | ±25V | 4650pF @ 100V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Rohm Semiconductor |
NCH 600V 20A POWER MOSFET. R602 |
7,524 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 196mOhm @ 9.5A, 10V | 5V @ 1mA | 40nC @ 10V | ±20V | 1550pF @ 25V | - | 231W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 31.6A TO-247AC |
8,082 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 31.6A (Tc) | 10V | 109mOhm @ 16.5A, 10V | 4V @ 250µA | 171nC @ 10V | ±30V | 4026pF @ 100V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
MOSFET N-CH 150V 100A TO-263 |
5,886 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 100A (Tc) | 10V | 11.5mOhm @ 50A, 10V | 4.5V @ 250µA | 74nC @ 10V | ±20V | 3970pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CHANNEL 600V 66A TO247 |
6,408 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 66A (Tc) | 10V | 42mOhm @ 33A, 10V | 5V @ 250µA | 120nC @ 10V | ±25V | 5508pF @ 100V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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Rohm Semiconductor |
R6020JNZ IS A POWER MOSFET FOR S |
8,748 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 15V | 234mOhm @ 10A, 15V | 7V @ 3.5mA | 45nC @ 15V | ±30V | 1500pF @ 100V | - | 76W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
R6020JNZ4 IS A POWER MOSFET WITH |
3,042 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 15V | 234mOhm @ 10A, 15V | 7V @ 3.5mA | 45nC @ 15V | ±30V | 1500pF @ 100V | - | 252W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
NCH 650V 20A POWER MOSFET. R652 |
2,520 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 205mOhm @ 9.5A, 10V | 5V @ 630µA | 40nC @ 10V | ±20V | 1550pF @ 25V | - | 231W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 1200V 3.8A TO-3PF |
4,284 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 6A (Tc) | 10V | 2.4Ohm @ 2.5A, 10V | 5V @ 100µA | 34nC @ 10V | ±30V | 1050pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOWATT-218FX | ISOWATT218FX |
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STMicroelectronics |
MOSFET |
5,976 |
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FDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 650V | 65A | - | - | - | 145nC @ 100V | - | - | - | - | - | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 35A TO-3PF |
2,772 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Tc) | 10V | 78mOhm @ 17.5A, 10V | 5V @ 250µA | 82nC @ 10V | ±25V | 3470pF @ 100V | - | 57W (Tc) | 150°C (TJ) | Through Hole | ISOWATT-218FX | ISOWATT218FX |
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Rohm Semiconductor |
R6025JNZ4 IS A POWER MOSFET WITH |
6,084 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 15V | 182mOhm @ 12.5A, 15V | 7V @ 4.5mA | 57nC @ 15V | ±30V | 1900pF @ 100V | - | 306W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
NCH 600V 25A POWER MOSFET; R6025 |
6,660 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 15V | 182mOhm @ 12.5A, 15V | 7V @ 4.5mA | 57nC @ 15V | ±30V | 1900pF @ 100V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
NCH 600V 30A POWER MOSFET. R603 |
3,546 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | 4V @ 1mA | 85nC @ 10V | ±20V | 2100pF @ 25V | - | 305W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 30A TO-220FP |
5,868 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 30A (Tc) | 10V | 95mOhm @ 15A, 10V | 5V @ 250µA | 71nC @ 10V | ±25V | 3000pF @ 100V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
POWER MOSFET |
7,020 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 600V | 68A (Tc) | 10V | 40mOhm @ 34A, 10V | 4V @ 250µA | 118nC @ 10V | ±25V | 5200pF @ 100V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 63A TO247-3 |
3,906 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 63A (Tc) | 10V | 46mOhm @ 31.5A, 10V | 4V @ 250µA | 117nC @ 10V | ±25V | 5140pF @ 100V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
COOLSIC MOSFETS 1200V |
7,776 |
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CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 4.7A (Tc) | 15V, 18V | 455mOhm @ 2A, 18V | 5.7V @ 1mA | 5.3nC @ 18V | +23V, -7V | 182pF @ 800V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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IXYS |
MOSFET N-CH 150V 150A TO-247 |
5,742 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 150A (Tc) | 10V | 7.2mOhm @ 75A, 10V | 4.5V @ 250µA | 105nC @ 10V | ±20V | 5500pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V |
7,956 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 51A (Tc) | 10V | 50mOhm @ 23A, 10V | 5V @ 250µA | 130nC @ 10V | ±30V | 3459pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Littelfuse |
SIC MOSFET 1200V 22A TO247-3 |
4,194 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 22A (Tc) | 20V | 200mOhm @ 10A, 20V | 4V @ 5mA | 57nC @ 20V | +22V, -6V | 870pF @ 800V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Rohm Semiconductor |
NCH 600V 30A POWER MOSFET; R6030 |
4,554 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 15V | 143mOhm @ 15A, 15V | 7V @ 5.5mA | 74nC @ 15V | ±30V | 2500pF @ 100V | - | 93W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |