Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STW70N60M2-4

STW70N60M2-4

For Reference Only

Part Number STW70N60M2-4
PNEDA Part # STW70N60M2-4
Description POWER MOSFET
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 7,020
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STW70N60M2-4 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTW70N60M2-4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STW70N60M2-4, STW70N60M2-4 Datasheet (Total Pages: 13, Size: 1,022.07 KB)
PDFSTW70N60M2-4 Datasheet Cover
STW70N60M2-4 Datasheet Page 2 STW70N60M2-4 Datasheet Page 3 STW70N60M2-4 Datasheet Page 4 STW70N60M2-4 Datasheet Page 5 STW70N60M2-4 Datasheet Page 6 STW70N60M2-4 Datasheet Page 7 STW70N60M2-4 Datasheet Page 8 STW70N60M2-4 Datasheet Page 9 STW70N60M2-4 Datasheet Page 10 STW70N60M2-4 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STW70N60M2-4 Datasheet
  • where to find STW70N60M2-4
  • STMicroelectronics

  • STMicroelectronics STW70N60M2-4
  • STW70N60M2-4 PDF Datasheet
  • STW70N60M2-4 Stock

  • STW70N60M2-4 Pinout
  • Datasheet STW70N60M2-4
  • STW70N60M2-4 Supplier

  • STMicroelectronics Distributor
  • STW70N60M2-4 Price
  • STW70N60M2-4 Distributor

STW70N60M2-4 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs40mOhm @ 34A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs118nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds5200pF @ 100V
FET Feature-
Power Dissipation (Max)450W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

The Products You May Be Interested In

FQB20N06TM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

60mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

590pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.75W (Ta), 53W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NP55N055SDG-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 28A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

96nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4800pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta), 77W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252 (MP-3ZK)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FCB199N65S3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET® III

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

199mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1.4mA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1225pF @ 400V

FET Feature

-

Power Dissipation (Max)

98W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

CSD19538Q3A

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

15A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

59mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

3.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

454pF @ 50V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 23W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-VSONP (3x3.15)

Package / Case

8-PowerVDFN

IRFHM8334TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

13A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1180pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.7W (Ta), 28W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (3.3x3.3), Power33

Package / Case

8-PowerTDFN

Recently Sold

74LCX125MTC

74LCX125MTC

ON Semiconductor

IC BUF NON-INVERT 3.6V 14TSSOP

LTC1569CS8-6#PBF

LTC1569CS8-6#PBF

Linear Technology/Analog Devices

IC FILTER 64KHZ LINEAR PHS 8SOIC

ADR291GRZ

ADR291GRZ

Analog Devices

IC VREF SERIES 2.5V 8SOIC

ALDP112W

ALDP112W

Panasonic Electric Works

RELAY GEN PURPOSE SPST 5A 12V

2920L075DR

2920L075DR

Littelfuse

PTC RESET FUSE 30V 750MA 2920

ST62T65CM6

ST62T65CM6

STMicroelectronics

IC MCU 8BIT 3.8KB OTP 28SOIC

TAJD336K035RNJ

TAJD336K035RNJ

CAP TANT 33UF 10% 35V 2917

SMBJ58A

SMBJ58A

Taiwan Semiconductor Corporation

TVS DIODE 58V 93.6V DO214AA

DM74LS14M

DM74LS14M

ON Semiconductor

IC INVERTER SCHMITT 6CH 14SOIC

PA95

PA95

Apex Microtechnology

IC OPAMP POWER 1 CIRCUIT 8SIP

VN10LP

VN10LP

Diodes Incorporated

MOSFET N-CH 60V 270MA TO92-3

ADV7180BCPZ

ADV7180BCPZ

Analog Devices

IC VIDEO DECODER SDTV 40-LFCSP