Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 383/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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ON Semiconductor |
T6 40V SG PQFN8*8 EXPANSI |
8,460 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 533A (Tc) | 10V | 0.48mOhm @ 50A, 10V | 4V @ 250µA | 187nC @ 10V | ±20V | 11800pF @ 20V | - | 5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-DFNW (8.3x8.4) | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CHANNEL 800V 14A TO220 |
2,322 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 14A (Tc) | 10V | 340mOhm @ 7A, 10V | 5V @ 250µA | 26nC @ 10V | ±30V | 866pF @ 100V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 80V 90A TO-220 |
4,626 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 80V | 90A (Tc) | 10V | 4.3mOhm @ 45A, 10V | 4.5V @ 250µA | 96nC @ 10V | ±20V | 6340pF @ 40V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 40 V (D-S) |
3,744 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 2.2mOhm @ 20A, 10V | 2.2V @ 250µA | 165nC @ 10V | ±20V | 8800pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 30V 120A D2PAK |
6,966 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 30V | 120A (Tc) | 10V | 3.6mOhm @ 60A, 10V | 4V @ 250µA | 140nC @ 10V | ±20V | 4950pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 4VSON |
5,076 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 27A (Tc) | 10V | 125mOhm @ 8.2A, 10V | 4V @ 410µA | 36nC @ 10V | ±20V | 1544pF @ 400V | - | 111W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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STMicroelectronics |
MOSFET N-CH 60V 21A PWRFLAT 8X8 |
5,760 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STMicroelectronics |
MOSFET N-CH 100V 120A H2PAK-2 |
7,812 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 9.3mOhm @ 60A, 10V | 4V @ 250µA | 57nC @ 10V | ±20V | 3305pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 7A TO-220AB |
5,220 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40nC @ 10V | ±30V | 680pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 200V 39A TO-220 |
7,398 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 39A (Tc) | 10V | 66mOhm @ 19.5A, 10V | 5V @ 250µA | 49nC @ 10V | ±30V | 2130pF @ 25V | - | 251W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 550V 12A D2PAK |
5,184 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 550V | 12A (Tc) | 10V | 350mOhm @ 6A, 10V | 5V @ 50µA | 39nC @ 10V | ±30V | 1000pF @ 25V | - | 160W (Tc) | -65°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
R6004JNX IS A POWER MOSFET WITH |
7,866 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 15V | 1.43Ohm @ 2A, 15V | 7V @ 450µA | 10.5nC @ 15V | ±30V | 260pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 800V 6.5A TO-220 |
5,400 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 6.5A (Tc) | 10V | 1.05Ohm @ 3.25A, 10V | 5V @ 250µA | 18nC @ 10V | ±30V | 620pF @ 25V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CHANNEL 40V 180A TO220 |
3,562 |
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STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 4.5V, 10V | - | - | - | - | - | - | 365W (Tc) | - | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 60V 180A H2PAK-6 |
6,462 |
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Automotive, AEC-Q101, STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 60V | 180A (Tc) | 10V | 1.5mOhm @ 90A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 11000pF @ 25V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-6 | TO-263-7, D²Pak (6 Leads + Tab) |
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STMicroelectronics |
MOSFET N-CH 600V TO-3PH |
7,470 |
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STMicroelectronics |
MOSFET N-CH 650V 22A D2PAK |
3,384 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 148mOhm @ 11A, 10V | 5V @ 250µA | 45nC @ 10V | ±25V | 1865pF @ 100V | - | 150W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 650V 18A I2PAK |
3,276 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 5V @ 250µA | 36nC @ 10V | ±25V | 1434pF @ 100V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Rohm Semiconductor |
RJ1G12BGN IS A POWER MOSFET WITH |
6,264 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 1.86mOhm @ 50A, 10V | 2.5V @ 2mA | 165nC @ 10V | ±20V | 12500pF @ 20V | - | 178W (Tc) | 150°C (TJ) | Surface Mount | LPTL | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 100V 180A TO247 |
6,084 |
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STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 3mOhm @ 90A, 10V | 4.5V @ 250µA | 160nC @ 10V | ±20V | 11550pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 24V 180A H2PAK-6 |
7,056 |
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Automotive, AEC-Q101, STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 24V | 180A (Tc) | 5V, 10V | 1.2mOhm @ 80A, 10V | 1V @ 250µA | 109nC @ 10V | ±20V | 7050pF @ 15V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H²PAK | TO-263-7, D²Pak (6 Leads + Tab) |
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ON Semiconductor |
T6 60V SG PQFN8*8 EXPANSI |
5,886 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 53.7A (Ta), 376A (Tc) | 10V | 0.91mOhm @ 50A, 10V | 4V @ 250µA | 113nC @ 10V | ±20V | 8705pF @ 30V | - | 5W (Ta), 244W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-DFNW (8.3x8.4) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CHAN 100-V D2PAK (TO-26 |
4,824 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 150A (Tc) | 7.5V, 10V | 2.88mOhm @ 30A, 10V | 4V @ 250µA | 214nC @ 10V | ±20V | 10870pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET |
4,698 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 16A (Tc) | 10V | 280mOhm @ 8A, 10V | 5V @ 100µA | 33nC @ 10V | ±30V | 1000pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
NMOS LL TOLL 40V 0.55 MOH |
2,556 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 300A (Tc) | 4.5V, 10V | 0.55mOhm @ 80A, 10V | 3V @ 250µA | 376nC @ 10V | ±20V | 19550pF @ 20V | - | 429W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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STMicroelectronics |
MOSFET N-CH 650V 18A TO-3PF |
7,362 |
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MDmesh™ M5 | N-Channel | MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 5V @ 250µA | 36nC @ 10V | ±25V | 1434pF @ 100V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOWATT-218FX | ISOWATT218FX |
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STMicroelectronics |
MOSFET N-CH 600V 11A D2PAK |
3,114 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 30nC @ 10V | ±25V | 790pF @ 50V | - | 90W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
T6 40V LL PQFN8*8 EXPANSI |
8,622 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 554.5A | 4.5V, 10V | 0.42mOhm @ 50A, 10V | 2V @ 250µA | 126nC @ 4.5V | ±20V | 16013pF @ 20V | - | 5W | -55°C ~ 175°C (TJ) | - | - | - |
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ON Semiconductor |
T6 40V SG PQFN8*8 EXPANSI |
2,736 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 533A (Tc) | 10V | 0.48mOhm @ 50A, 10V | 4V @ 250µA | 187nC @ 10V | ±20V | 11800pF @ 20V | - | 5W | -55°C ~ 175°C (TJ) | - | - | - |
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ON Semiconductor |
T6 60V LL PQFN8*8 EXPANSI |
3,906 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 398.2A | 4.5V, 10V | 0.81mOhm @ 50A, 10V | 2.2V @ 250µA | 165nC @ 10V | ±20V | 12300pF @ 25V | - | 5W | -55°C ~ 175°C (TJ) | - | - | - |