Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 368/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH + SBD V |
6,732 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Micro Commercial Co |
N-CHANNEL MOSFET, SOT23-6L PACKA |
2,250 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 8A (Tc) | 4.5V, 10V | 14mOhm @ 8A, 10V | 3V @ 250µA | 13nC @ 5V | ±20V | 900pF @ 15V | - | 1.6W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6L | SOT-23-6 |
|
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS-30 |
2,484 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS-30 |
3,834 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS60V |
8,118 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET P-CHANNEL 12V 8A 6TSOP |
4,248 |
|
TrenchFET® Gen III | P-Channel | MOSFET (Metal Oxide) | 12V | 8A (Tc) | 1.8V, 4.5V | 17.8mOhm @ 8.7A, 4.5V | 1V @ 250µA | 57nC @ 8V | ±8V | 1975pF @ 6V | - | 3.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS30V |
3,508 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
Nexperia |
PMV15ENEA/SOT23/TO-236AB |
7,830 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 6.2A (Ta) | 4.5V, 10V | 20mOhm @ 5.8A, 10V | 2.5V @ 250µA | 14nC @ 10V | ±20V | 440pF @ 15V | - | 700mW (Ta), 8.3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
|
|
Vishay Siliconix |
MOSFET P-CH 30-V PWRPAK SC-70 |
8,298 |
|
TrenchFET® Gen IV | P-Channel | MOSFET (Metal Oxide) | 30V | 10.6A (Ta), 12A (Tc) | 4.5V, 10V | 20mOhm @ 5A, 10V | 2.5V @ 250µA | 26nC @ 10V | +16V, -20V | 950pF @ 15V | - | 3.4W (Ta), 17.9W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
|
|
ON Semiconductor |
MOSFET N-CH 40V 27A |
8,694 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 9.4A (Ta), 27A (Tc) | 10V | 17.3mOhm @ 7.5A, 10V | 3.5V @ 20µA | 6.3nC @ 10V | ±20V | 325pF @ 25V | - | 2.9W (Ta), 23W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
|
Rohm Semiconductor |
RQ5E025TN IS A SMALL SIGNAL MOSF |
6,822 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 2.5V, 4.5V | 92mOhm @ 2.5A, 4.5V | 1.5V @ 1mA | 4.6nC @ 4.5V | ±12V | 220pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
|
|
Diodes Incorporated |
MOSFET P-CH 20V 2.5A 3-DFN |
8,424 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 1.8V, 4.5V | 54mOhm @ 2.5A, 4.5V | 1V @ 250µA | 9.1nC @ 4.5V | ±8V | 214pF @ 10V | - | 530mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | DFN2015H4-3 | 3-XFDFN |
|
|
Vishay Siliconix |
MOSFET P-CH 20V 12A SC70-6 |
7,020 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 12A (Tc) | 2.5V, 4.5V | 16.7mOhm @ 7A, 4.5V | 1.2V @ 250µA | 69nC @ 10V | ±12V | 2180pF @ 10V | - | 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
|
|
Vishay Siliconix |
MOSFET N-CH 30-V PWRPAK SO-8 |
2,376 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta), 40A (Tc) | 4.5V, 10V | 6.83mOhm @ 10A, 10V | 2.4V @ 250µA | 19nC @ 10V | +20V, -16V | 680pF @ 15V | - | 3.8W (Ta), 17W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
|
Vishay Siliconix |
MOSFET N-CH 60V 1.6A SC70-6 |
8,730 |
|
Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 1.7A (Tc) | 4.5V, 10V | 120mOhm @ 3.8A, 10V | 2.5V @ 250µA | 5.5nC @ 10V | ±20V | 344pF @ 15V | - | 3.3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | SC-70-6 | 6-TSSOP, SC-88, SOT-363 |
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|
Rohm Semiconductor |
RQ6E040XN IS THE LOW ON-RESISTAN |
4,158 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4V, 10V | 50mOhm @ 4A, 10V | 2.5V @ 1mA | 3.3nC @ 5V | ±20V | 180pF @ 10V | - | 950mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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|
Nexperia |
BUK7M20-40H/SOT1210/MLFPAK |
5,958 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 25A (Ta) | 10V | 20mOhm @ 10A, 10V | 3.6V @ 1mA | 10.2nC @ 10V | +20V, -10V | 598pF @ 25V | - | 38W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |
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Vishay Siliconix |
MOSFET N-CH 30V PP SO-8 |
6,192 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 70A (Tc) | 4.5V, 10V | 4.6mOhm @ 15A, 10V | 2.4V @ 250µA | 32nC @ 10V | +20V, -16V | 1050pF @ 15V | - | 3.7W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS30V |
8,586 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
X34 SMALL SIGNAL NCH LOW RON MOS |
7,614 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STMicroelectronics |
MOSFET N-CH 600V 0.6A TO-92 |
6,876 |
|
SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 600V | 600mA (Tc) | 10V | 4.5Ohm @ 1A, 10V | 4.5V @ 50µA | 12nC @ 10V | ±30V | 235pF @ 50V | - | 2.5W (Tc) | 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
STMicroelectronics |
MOSFET |
4,896 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 300mA (Tc) | 10V | 15Ohm @ 400mA, 10V | 4.5V @ 50µA | 6.9nC @ 10V | ±30V | 94pF @ 25V | - | 3.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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|
Vishay Siliconix |
MOSFET P-CHAN 20V POWERPAK SC-70 |
8,136 |
|
Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 2.68A (Tc) | 2.5V, 4.5V | 113mOhm @ 2A, 4.5V | 1.5V @ 250µA | 5.3nC @ 4.5V | ±8V | 375pF @ 10V | - | 13.6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
|
|
Vishay Siliconix |
MOSFET P-CHAN 40V |
8,262 |
|
Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 10A (Tc) | 4.5V, 10V | 35mOhm @ 5A, 10V | 2.5V @ 250µA | 33nC @ 10V | ±20V | 1815pF @ 25V | - | 13.6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
|
|
Vishay Siliconix |
MOSFET N-CH 30 V PWRPAK SO-8 |
8,802 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta), 40A (Tc) | 4.5V, 10V | 6.83mOhm @ 10A, 10V | 2.4V @ 250µA | 19nC @ 10V | +20V, -16V | 680pF @ 15V | - | 3.8W (Ta), 17W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
|
Rohm Semiconductor |
RQ5C025TP IS A MOSFET WITH G-S P |
3,526 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 2.5V, 4.5V | 95mOhm @ 2.5A, 4.5V | 2V @ 1mA | 7nC @ 4.5V | ±12V | 630pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
|
|
Rohm Semiconductor |
RQ5E025SP IS A SMALL SIGNAL MOSF |
6,210 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4V, 10V | 98mOhm @ 2.5A, 10V | 2.5V @ 1mA | 5.4nC @ 5V | ±20V | 460pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
|
|
Vishay Siliconix |
P-CHANNEL 30-V (D-S) MOSFET TSOP |
3,438 |
|
TrenchFET® Gen IV | P-Channel | MOSFET (Metal Oxide) | 30V | 6.4A (Ta), 8A (Tc) | 4.5V, 10V | 31.2mOhm @ 5A, 10V | 2.2V @ 250µA | 14.5nC @ 10V | +16V, -20V | 580pF @ 15V | - | 2W (Ta), 3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
|
|
STMicroelectronics |
MOSFET P-CH 30V 4A POWERFLAT |
7,128 |
|
DeepGATE™, STripFET™ H6 | P-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4.5V, 10V | 56mOhm @ 2A, 10V | 2.5V @ 250µA | 6nC @ 4.5V | ±20V | 639pF @ 25V | - | 2.4W (Ta) | 150°C (TJ) | Surface Mount | PowerFlat™ (2x2) | 6-PowerWDFN |
|
|
Nexperia |
BUK7M15-40H/SOT1210/MLFPAK |
3,672 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 30A (Ta) | 10V | 15mOhm @ 10A, 10V | 3.6V @ 1mA | 12.7nC @ 10V | +20V, -10V | 801pF @ 25V | - | 44W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |