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STQ2LN60K3-AP

STQ2LN60K3-AP

For Reference Only

Part Number STQ2LN60K3-AP
PNEDA Part # STQ2LN60K3-AP
Description MOSFET N-CH 600V 0.6A TO-92
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,876
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STQ2LN60K3-AP Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTQ2LN60K3-AP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STQ2LN60K3-AP, STQ2LN60K3-AP Datasheet (Total Pages: 13, Size: 607.27 KB)
PDFSTQ2LN60K3-AP Datasheet Cover
STQ2LN60K3-AP Datasheet Page 2 STQ2LN60K3-AP Datasheet Page 3 STQ2LN60K3-AP Datasheet Page 4 STQ2LN60K3-AP Datasheet Page 5 STQ2LN60K3-AP Datasheet Page 6 STQ2LN60K3-AP Datasheet Page 7 STQ2LN60K3-AP Datasheet Page 8 STQ2LN60K3-AP Datasheet Page 9 STQ2LN60K3-AP Datasheet Page 10 STQ2LN60K3-AP Datasheet Page 11

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STQ2LN60K3-AP Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C600mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds235pF @ 50V
FET Feature-
Power Dissipation (Max)2.5W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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