Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 35/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Texas Instruments |
MOSFET N-CH 100V 100A 8SON |
19,922 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 6V, 10V | 4.9mOhm @ 17A, 10V | 3.2V @ 250µA | 62nC @ 10V | ±20V | 4810pF @ 50V | - | 3.1W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 100V 28A PPAK SO-8 |
284,730 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 4.5V, 10V | 41mOhm @ 7.8A, 10V | 3V @ 250µA | 160nC @ 10V | ±20V | 4600pF @ 50V | - | 5.2W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Texas Instruments |
MOSFET N-CH 30V 100A 8SON |
58,176 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta), 100A (Tc) | 4.5V, 10V | 1.15mOhm @ 40A, 10V | 1.7V @ 250µA | 51nC @ 4.5V | ±20V | 9200pF @ 15V | - | 3.2W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 60V 50A TO252 |
322,746 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 15mOhm @ 17A, 10V | 3V @ 250µA | 165nC @ 10V | ±20V | 4950pF @ 25V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 100V 37.1A TO252 |
94,914 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 37.1A (Tc) | 4.5V, 10V | 43mOhm @ 9.2A, 10V | 3V @ 250µA | 160nC @ 10V | ±20V | 4600pF @ 50V | - | 8.3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 40V 50A TO252 |
45,930 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 9.4mOhm @ 24A, 10V | 3V @ 250µA | 150nC @ 10V | ±20V | 4800pF @ 25V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 100A 8TDSON |
189,852 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 4mOhm @ 50A, 10V | 3.8V @ 95µA | 72nC @ 10V | ±20V | 5300pF @ 50V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |
93,774 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 10V | 6.25mOhm @ 10A, 10V | 4.5V @ 250µA | 75nC @ 10V | ±20V | 2830pF @ 30V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 650V 11.4A TO263 |
80,310 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41nC @ 10V | ±20V | 1100pF @ 100V | - | 104.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 60V 50A TO-220 |
14,610 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 18mOhm @ 27.5A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1300pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 40V 11A PPAK SO-8 |
52,206 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 11A (Ta) | 4.5V, 10V | 9.2mOhm @ 18.6A, 10V | 3V @ 250µA | 140nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 60V 48A TO-220AB |
22,428 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 48A (Tc) | 10V | 23mOhm @ 29A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1360pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
MOSFET N-CH 100V 75A D2PAK |
25,620 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 10mOhm @ 25A, 10V | 4V @ 1mA | 80nC @ 10V | ±20V | 6773pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 75V 75A D2PAK |
18,540 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 5V, 10V | 5.5mOhm @ 25A, 10V | 2V @ 1mA | 95nC @ 5V | ±15V | 11693pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 30V 120A TO-220AB |
18,768 |
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STripFET™ H6 | N-Channel | MOSFET (Metal Oxide) | 30V | 120A (Tc) | 4.5V, 10V | 3.2mOhm @ 60A, 10V | 2.5V @ 250µA | 42nC @ 4.5V | ±20V | 3500pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 30V 100A 8VSON |
116,694 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Ta) | 4.5V, 10V | 1mOhm @ 35A, 10V | 1.8V @ 250µA | 64nC @ 4.5V | ±20V | 9000pF @ 15V | - | 3.2W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8 |
47,886 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 31A (Ta), 100A (Tc) | 4.5V, 10V | 1.45mOhm @ 50A, 10V | 2V @ 250µA | 55nC @ 10V | ±20V | 4000pF @ 20V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 60V 61A DPAK |
119,508 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta), 61A (Tc) | 4.5V, 10V | 16mOhm @ 29A, 10V | 2.5V @ 250µA | 85nC @ 10V | ±20V | 4800pF @ 25V | - | 4.1W (Ta), 118W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N CH 100V 28A DFN5X6 |
42,780 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Ta), 85A (Tc) | 6V, 10V | 4.6mOhm @ 20A, 10V | 3.4V @ 250µA | 90nC @ 10V | ±20V | 4600pF @ 50V | - | 7.3W (Ta), 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Vishay Siliconix |
MOSFET N-CH 200V 25A PPAK SO-8 |
165,051 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 25A (Tc) | 6V, 10V | 70mOhm @ 5.9A, 10V | 4V @ 250µA | 77nC @ 10V | ±20V | 2250pF @ 100V | - | 5.4W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
DIFFERENTIATED MOSFETS |
40,146 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 31A (Ta), 100A (Tc) | 6V, 10V | 1.6mOhm @ 50A, 10V | 3.3V @ 95µA | 95nC @ 10V | ±20V | 6500pF @ 30V | - | 3W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 13.4A DIRECTFET |
32,772 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 13.4A (Ta), 67A (Tc) | 10V | 11mOhm @ 13.4A, 10V | 4.9V @ 100µA | 36nC @ 10V | ±20V | 1350pF @ 25V | - | 3.6W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
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EPC |
AEC-Q101 GAN FET 100V 13.5 MOHM |
26,022 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 18A (Ta) | 5V | 13.5mOhm @ 11A, 5V | 2.5V @ 3mA | 4nC @ 5V | +6V, -4V | 407pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
MOSFET N-CH 100V 90A TDSON-8 |
495,714 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 14.9A (Ta), 90A (Tc) | 6V, 10V | 6mOhm @ 50A, 10V | 3.5V @ 90µA | 68nC @ 10V | ±20V | 4900pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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|
ON Semiconductor |
MOSFET N-CH 60V 30A TO-220 |
20,376 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 40mOhm @ 15A, 10V | 4V @ 250µA | 25nC @ 10V | ±25V | 945pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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|
EPC |
GANFET N-CH 80V 18A DIE |
373,800 |
|
Automotive, AEC-Q101, eGaN® | N-Channel | GaNFET (Gallium Nitride) | 80V | 18A | 5V | 17mOhm @ 11A, 5V | 2.5V @ 3mA | 4nC @ 5V | +5.75V, -4V | 415pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (6-Solder Bar) | Die |
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ON Semiconductor |
MOSFET N-CH 60V 32A TO-220 |
97,866 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 32A (Tc) | 5V, 10V | 35mOhm @ 16A, 10V | 2.5V @ 250µA | 20nC @ 5V | ±20V | 1040pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 80V 32A PPAK SO-8 |
140,304 |
|
Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 80V | 32A (Tc) | 6V, 10V | 25mOhm @ 10.2A, 10V | 2.5V @ 250µA | 155nC @ 10V | ±20V | 5100pF @ 40V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 60V 50A TO252 |
55,332 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 15.5mOhm @ 17A, 10V | 2.5V @ 250µA | 150nC @ 10V | ±20V | 5910pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
21,792 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 60A (Tc) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | 2.8V @ 250µA | 90nC @ 10V | ±20V | 2900pF @ 40V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |