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NVD5117PLT4G-VF01

NVD5117PLT4G-VF01

For Reference Only

Part Number NVD5117PLT4G-VF01
PNEDA Part # NVD5117PLT4G-VF01
Description MOSFET P-CH 60V 61A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 119,508
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 30 - Dec 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVD5117PLT4G-VF01 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVD5117PLT4G-VF01
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVD5117PLT4G-VF01, NVD5117PLT4G-VF01 Datasheet (Total Pages: 6, Size: 128.93 KB)
PDFNVD5117PLT4G Datasheet Cover
NVD5117PLT4G Datasheet Page 2 NVD5117PLT4G Datasheet Page 3 NVD5117PLT4G Datasheet Page 4 NVD5117PLT4G Datasheet Page 5 NVD5117PLT4G Datasheet Page 6

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NVD5117PLT4G-VF01 Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C11A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 29A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs85nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4800pF @ 25V
FET Feature-
Power Dissipation (Max)4.1W (Ta), 118W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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