Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 287/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 60V 70A TO-247AC |
6,372 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 70A (Tc) | 10V | 14mOhm @ 54A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 4500pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-247 |
7,722 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-220AB |
7,794 |
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DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 125mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | ±30V | 2400pF @ 300V | - | 180W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-3PN |
7,866 |
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DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 125mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | ±30V | 2400pF @ 300V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 1000V 1.5A TO-220AB |
6,144 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 1.5A (Tc) | 10V | 11Ohm @ 1A, 10V | 4.5V @ 25µA | 14.5nC @ 10V | ±30V | 400pF @ 25V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO247 |
5,544 |
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DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 140mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | ±30V | 2400pF @ 300V | - | 180W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 22A TO-3P |
7,740 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 270mOhm @ 11A, 10V | 5.5V @ 250µA | 50nC @ 10V | ±30V | 2630pF @ 25V | - | 350W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
60V/270A TRENCHT3 HIPERFET MOSFE |
7,056 |
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HiperFET™, TrenchT3™ | N-Channel | MOSFET (Metal Oxide) | 60V | 270A (Tc) | 10V | 3.1mOhm @ 100A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 12600pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 100V 180A TO-3P |
6,012 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 6.4mOhm @ 25A, 10V | 4.5V @ 250µA | 151nC @ 10V | ±30V | 6900pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO247-3 |
7,056 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 125mOhm @ 11.6A, 10V | 4.5V @ 960µA | 56nC @ 10V | ±20V | 2660pF @ 100V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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IXYS |
60V/220A TRENCHT3 HIPERFET MOSFE |
5,130 |
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HiperFET™, TrenchT3™ | N-Channel | MOSFET (Metal Oxide) | 60V | 220A (Tc) | 10V | 4mOhm @ 100A, 10V | 4V @ 250µA | 136nC @ 10V | ±20V | 8500pF @ 25V | - | 440W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 22A TO-247 |
6,168 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 270mOhm @ 11A, 10V | 5.5V @ 2.5mA | 50nC @ 10V | ±30V | 2630pF @ 25V | - | 350W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH |
6,570 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 14A (Ta), 180A (Tc) | 6V, 10V | 6.2mOhm @ 20A, 10V | 3.5V @ 250µA | 136nC @ 10V | ±20V | 6460pF @ 75V | - | 3.1W (Ta), 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 27A TO247 |
6,066 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 27A (Tc) | 10V | 160mOhm @ 13.5A, 10V | 4V @ 250µA | 26nC @ 10V | ±30V | 1294pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 52A TO-3P |
6,264 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 300V | 52A (Tc) | 10V | 66mOhm @ 26A, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 3490pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 15A TO-220FM |
9,324 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Ta) | 10V | 300mOhm @ 7.5A, 10V | 4.5V @ 1mA | 50nC @ 10V | ±30V | 1700pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-247 |
6,336 |
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DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 88mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET P-CH 150V 36A TO-3P |
7,614 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 150V | 36A (Tc) | 10V | 110mOhm @ 18A, 10V | 4.5V @ 250µA | 55nC @ 10V | ±20V | 3100pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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STMicroelectronics |
MOSFET N CH 800V 14A TO-247 |
6,912 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 14A (Tc) | 10V | 375mOhm @ 7A, 10V | 5V @ 100µA | 32nC @ 10V | ±30V | 1100pF @ 100V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 26A TO-247 |
6,360 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 230mOhm @ 13A, 10V | 5V @ 4mA | 42nC @ 10V | ±30V | 2220pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 60A TO220AB |
6,636 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 60A (Tc) | 10V | 23mOhm @ 30A, 10V | 4.5V @ 1.5mA | 50nC @ 10V | ±20V | 3610pF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB (IXFP) | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 6A TO247 |
8,748 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 6A (Tc) | - | 500mOhm @ 3A, 0V | - | 96nC @ 5V | ±20V | 2800pF @ 25V | Depletion Mode | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 35A TO220SIS |
6,660 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Ta) | 10V | 95mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115nC @ 10V | ±30V | 4100pF @ 300V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 600V 26A TO-247 |
7,614 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 270mOhm @ 500mA, 10V | 5V @ 4mA | 72nC @ 10V | ±30V | 4150pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
850V/20A ULTRA JUNCTION X-CLASS |
6,930 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 20A (Tc) | 10V | 330mOhm @ 500mA, 10V | 5.5V @ 2.5mA | 63nC @ 10V | ±30V | 1660pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 650V 34A TO-247 |
5,580 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 34A (Tc) | 10V | 105mOhm @ 17A, 10V | 5.5V @ 2.5mA | 56nC @ 10V | ±30V | 3330pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET P-CH 500V 8A TO-247 |
4,716 |
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- | P-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 1.2Ohm @ 4A, 10V | 5V @ 250µA | 130nC @ 10V | ±20V | 3400pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 1200V 3A TO-220 |
8,406 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 3A (Tc) | 10V | 4.5Ohm @ 500mA, 10V | 5V @ 1.5mA | 39nC @ 10V | ±20V | 1050pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 98A SUPER-220 |
6,750 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 98A (Tc) | 10V | 23mOhm @ 59A, 10V | 5V @ 250µA | 240nC @ 10V | ±30V | 6080pF @ 25V | - | 650W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | SUPER-220™ (TO-273AA) | TO-273AA |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 38.8A TO-247 |
5,130 |
|
DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 65mOhm @ 12.5A, 10V | 3.5V @ 1.9mA | 85nC @ 10V | ±30V | 4100pF @ 300V | Super Junction | 270W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |