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IXFP3N120

IXFP3N120

For Reference Only

Part Number IXFP3N120
PNEDA Part # IXFP3N120
Description MOSFET N-CH 1200V 3A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,406
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFP3N120 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFP3N120
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFP3N120, IXFP3N120 Datasheet (Total Pages: 4, Size: 565.15 KB)
PDFIXFP3N120 Datasheet Cover
IXFP3N120 Datasheet Page 2 IXFP3N120 Datasheet Page 3 IXFP3N120 Datasheet Page 4

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IXFP3N120 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1050pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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