Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 243/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 20V 50A POLARPAK |
6,174 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 50A (Tc) | 2.5V, 4.5V | 3.5mOhm @ 18A, 4.5V | 2V @ 250µA | 143nC @ 10V | ±12V | 4300pF @ 10V | - | 5.2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (S) | 10-PolarPAK® (S) |
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STMicroelectronics |
MOSFET N-CH 600V 7A PWRFLAT HV |
7,686 |
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MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 418mOhm @ 4.5A, 10V | 4.75V @ 250µA | 17nC @ 10V | ±25V | 590pF @ 100V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) HV | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 28A 8-SOIC |
4,932 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Tc) | 4.5V, 10V | 4.2mOhm @ 20A, 10V | 3V @ 250µA | 100nC @ 10V | ±20V | 3650pF @ 15V | - | 3W (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics America |
MOSFET N-CH 30V 45A LFPAK |
3,418 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 3.8mOhm @ 22.5A, 10V | 2.5V @ 1mA | 27nC @ 4.5V | ±20V | 4400pF @ 10V | - | 25W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET N-CH 30V 39A 8-SOIC |
3,924 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 39A (Tc) | 4.5V, 10V | 2.75mOhm @ 15A, 10V | 2.5V @ 250µA | 105nC @ 10V | ±20V | 4405pF @ 15V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Texas Instruments |
MOSFET N-CH 60V 22A 8VSON |
7,758 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta), 100A (Tc) | 6V, 10V | 3.4mOhm @ 25A, 10V | 3.4V @ 250µA | 64nC @ 10V | ±20V | 5340pF @ 30V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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ON Semiconductor |
T6 60V LL DPAK |
5,202 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta), 91A (Tc) | 4.5V, 10V | 4.1mOhm @ 45A, 10V | 2.1V @ 250µA | 17nC @ 10V | ±20V | 2900pF @ 30V | - | 4.4W (Ta), 76W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 55V 80A DPAK |
7,380 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 8.5mOhm @ 32A, 10V | 4V @ 250µA | 45nC @ 10V | ±20V | 2200pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET N-CH 650V 300MA 3DPAK |
4,878 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 300mA (Tj) | 0V | 8Ohm @ 150mA, 0V | - | - | ±20V | 825pF @ 25V | Depletion Mode | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 25V 40A POWER33 |
2,088 |
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Dual Cool™, PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 24A (Ta), 40A (Tc) | 4.5V, 10V | 3.5mOhm @ 22.5A, 10V | 3V @ 1mA | 44nC @ 10V | ±20V | 2705pF @ 13V | - | 3W (Ta), 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool ™ 33 | 8-PowerTDFN |
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Rohm Semiconductor |
RD3P200SNFRA IS A POWER MOSFET F |
7,110 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 20A (Ta) | 4V, 10V | 46mOhm @ 20A, 10V | 2.5V @ 1mA | 55nC @ 10V | ±20V | 2100pF @ 25V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 100V 40A D2PAK |
13,212 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 5V, 10V | 33mOhm @ 20A, 10V | 2.5V @ 250µA | 64nC @ 4.5V | ±15V | 2300pF @ 25V | - | 150W (Tc) | -65°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Panasonic Electronic Components |
MOSFET P-CH 40V 7A S08 |
2,100 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 7A (Ta) | 4.5V, 10V | 25mOhm @ 7A, 10V | 2.5V @ 1mA | - | ±20V | 2700pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | SO8-F1-B | 8-SMD, Flat Lead |
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Vishay Siliconix |
MOSFET P-CH 100V 12A D2PAK |
20,316 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 10V | 300mOhm @ 7.2A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 860pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 250V 17A D2PAK |
3,636 |
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Automotive, AEC-Q101, STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 250V | 17A (Tc) | 10V | 165mOhm @ 8.5A, 10V | 4V @ 250µA | 29.5nC @ 10V | ±20V | 1000pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 26A SOP8 |
3,924 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 250V | 26A (Tc) | 10V | 52mOhm @ 13A, 10V | 4V @ 1mA | 22nC @ 10V | ±20V | 2200pF @ 100V | - | 78W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET P-CH 100V 28A PPAK SO-8 |
12,674 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 4.5V, 10V | 41mOhm @ 7.8A, 10V | 3V @ 250µA | 160nC @ 10V | ±20V | 4600pF @ 50V | - | 5.2W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET N-CH 100V 80A H2PAK-2 |
8,568 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 9.5mOhm @ 40A, 10V | 4.5V @ 250µA | 45nC @ 10V | ±20V | 3100pF @ 50V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
N-CHANNEL 800 V, 0.75 OHM TYP., |
4,104 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 900V | 7A (Tc) | 10V | - | 5V @ 100µA | - | ±30V | - | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 600V 12A |
23,304 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 295mOhm @ 6A, 10V | 5V @ 250µA | 20nC @ 10V | ±25V | 800pF @ 100V | - | 90W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
8,694 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 45V | 300A (Tc) | 4.5V, 10V | - | 2.4V @ 1mA | 122nC @ 10V | ±20V | 9600pF @ 22.5V | - | 960mW (Ta), 170W (Tc) | 175°C | Surface Mount | 8-DSOP Advance | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 600V 10A DPAK |
2,736 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 550mOhm @ 4A, 10V | 4V @ 250µA | 19nC @ 10V | ±25V | 540pF @ 50V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
BUK7S1R0-40H/SOT1235/LFPAK88 |
3,384 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 325A (Ta) | 10V | 1mOhm @ 25A, 10V | 3.6V @ 1mA | 137nC @ 10V | +20V, -10V | 10322pF @ 25V | - | 375W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK88 (SOT1235) | SOT-1235 |
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Vishay Siliconix |
MOSFET N-CH 40V 50A PPAK SO-8 |
6,156 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | 2.5V @ 250µA | 95nC @ 10V | ±25V | 4200pF @ 20V | - | 5.2W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Nexperia |
MOSFET N-CH 80V 120A TO220AB |
25,140 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4.3mOhm @ 25A, 10V | 4V @ 1mA | 111nC @ 10V | ±20V | 8161pF @ 40V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 120A TO263-7 |
18,396 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2mOhm @ 30A, 10V | 3.5V @ 250µA | 185nC @ 10V | ±20V | 11900pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Vishay Siliconix |
MOSFET N-CH 150V 26A PPAK SO-8 |
3,852 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 26A (Tc) | 8V, 10V | 45mOhm @ 5A, 10V | 4.5V @ 250µA | 43nC @ 10V | ±20V | 1735pF @ 50V | - | 5.2W (Ta), 64W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 150V 26A PPAK SO-8 |
8,190 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 26A (Tc) | 8V, 10V | 45mOhm @ 5A, 10V | 4.5V @ 250µA | 43nC @ 10V | ±20V | 1735pF @ 50V | - | 5.2W (Ta), 64W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET N-CH 60V 70A DPAK |
8,928 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 60V | 70A (Tc) | 10V | 10.5mOhm @ 35A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 2200pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 34A TO-220AB FP |
18,486 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 34A (Tc) | 10V | 16mOhm @ 20A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4560pF @ 25V | - | 46W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |