Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIE820DF-T1-GE3

SIE820DF-T1-GE3

For Reference Only

Part Number SIE820DF-T1-GE3
PNEDA Part # SIE820DF-T1-GE3
Description MOSFET N-CH 20V 50A POLARPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,174
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 30 - Dec 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIE820DF-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIE820DF-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIE820DF-T1-GE3, SIE820DF-T1-GE3 Datasheet (Total Pages: 7, Size: 120.8 KB)
PDFSIE820DF-T1-E3 Datasheet Cover
SIE820DF-T1-E3 Datasheet Page 2 SIE820DF-T1-E3 Datasheet Page 3 SIE820DF-T1-E3 Datasheet Page 4 SIE820DF-T1-E3 Datasheet Page 5 SIE820DF-T1-E3 Datasheet Page 6 SIE820DF-T1-E3 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIE820DF-T1-GE3 Datasheet
  • where to find SIE820DF-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIE820DF-T1-GE3
  • SIE820DF-T1-GE3 PDF Datasheet
  • SIE820DF-T1-GE3 Stock

  • SIE820DF-T1-GE3 Pinout
  • Datasheet SIE820DF-T1-GE3
  • SIE820DF-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIE820DF-T1-GE3 Price
  • SIE820DF-T1-GE3 Distributor

SIE820DF-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs3.5mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs143nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds4300pF @ 10V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package10-PolarPAK® (S)
Package / Case10-PolarPAK® (S)

The Products You May Be Interested In

AON6448L_001

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

SDMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

11A (Ta), 65A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

Rds On (Max) @ Id, Vgs

9.6mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

3100pF @ 40V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN-EP (5x6)

Package / Case

8-PowerVDFN

AOY514

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

17A (Ta), 46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1187pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251B

Package / Case

TO-251-3 Stub Leads, IPak

NVJS4151PT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

67mOhm @ 2.9A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-88/SC70-6/SOT-363

Package / Case

6-TSSOP, SC-88, SOT-363

DMTH6010LPSQ-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

13.5A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

41.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2090pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.6W (Ta), 136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN

IRF3709ZCSTRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

87A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.3mOhm @ 21A, 10V

Vgs(th) (Max) @ Id

2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2130pF @ 15V

FET Feature

-

Power Dissipation (Max)

79W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

MAX6817EUT+T

MAX6817EUT+T

Maxim Integrated

IC DEBOUNCER SWITCH DUAL SOT23-6

UVR1E101MED1TA

UVR1E101MED1TA

Nichicon

CAP ALUM 100UF 20% 25V RADIAL

M48T59Y-70PC1

M48T59Y-70PC1

STMicroelectronics

IC RTC CLK/CALENDAR PAR 28DIP

ZHCS1000TA

ZHCS1000TA

Diodes Incorporated

DIODE SCHOTTKY 40V 1A SOT23-3

IRAMX16UP60B-2

IRAMX16UP60B-2

Infineon Technologies

IC PWR HYBRID 600V 16A SIP2

SSM3K15AFS,LF

SSM3K15AFS,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 0.1A SSM

UPD720201K8-711-BAC-A

UPD720201K8-711-BAC-A

Renesas Electronics America

IC HOST CTRLR USB 3.0 68QFN

AD8051ARTZ-R2

AD8051ARTZ-R2

Analog Devices

IC OPAMP VFB 1 CIRCUIT SOT23-5

HUF75344P3

HUF75344P3

ON Semiconductor

MOSFET N-CH 55V 75A TO-220AB

NL453232T-102J-PF

NL453232T-102J-PF

TDK

FIXED IND 1MH 30MA 40 OHM SMD

AD8505ARJZ-R7

AD8505ARJZ-R7

Analog Devices

IC OPAMP GP 1 CIRCUIT SOT23-5

MCP16331T-E/CH

MCP16331T-E/CH

Microchip Technology

IC REG BUCK ADJ 500MA SOT23-6