Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 230/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 30V 14A 8-SOIC |
8,550 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 7.6mOhm @ 14A, 10V | 3V @ 250µA | 27nC @ 10V | ±20V | 1680pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
|
|
Vishay Siliconix |
MOSFET N-CH 250V 3.8A DPAK |
4,338 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 3.8A (Tc) | 10V | 1.1Ohm @ 2.3A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 30V 100A LFPAK |
6,426 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 1.02mOhm @ 25A, 10V | 2.2V @ 2mA | 121.35nC @ 10V | ±20V | 8598pF @ 15V | - | 238W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Microchip Technology |
MOSFET P-CH 200V 0.26A SOT89-3 |
5,814 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 260mA (Tj) | 4.5V, 10V | 12Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 125pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
|
|
Infineon Technologies |
MOSFET N-CH 60V 43A TO-262 |
88,356 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | ±20V | 1150pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
Nexperia |
MOSFET N-CH 25V 100A LFPAK |
4,860 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V | 3mOhm @ 25A, 4.5V | 950mV @ 1mA | 92nC @ 4.5V | ±10V | 6150pF @ 10V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
|
ON Semiconductor |
MOSFET N-CH 60V 8.5A D-PAK |
7,416 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 8.5A (Ta) | 6V, 10V | 21mOhm @ 8.5A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 1835pF @ 30V | - | 2.8W (Ta), 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Nexperia |
MOSFET N-CH 75V 100A D2PAK |
203,874 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 4mOhm @ 25A, 10V | 4V @ 1mA | 142nC @ 10V | ±20V | 11659pF @ 25V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
Nexperia |
MOSFET N-CH 40V 100A D2PAK |
32,676 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 2mOhm @ 25A, 10V | 4V @ 1mA | 175nC @ 10V | ±20V | 11323pF @ 25V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
Nexperia |
MOSFET N-CH 55V 120A D2PAK |
29,976 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 120A (Tc) | 10V | 2.7mOhm @ 25A, 10V | 2.8V @ 1mA | 258nC @ 10V | ±16V | 15300pF @ 25V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
Vishay Siliconix |
MOSFET N-CH 40V 50A PPAK SO-8 |
5,238 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 3.8mOhm @ 15A, 10V | 2.5V @ 250µA | 90nC @ 10V | ±20V | 3350pF @ 20V | - | 5.2W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 60A 8SOP ADV |
2,610 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 2.5V, 4.5V | 1.7mOhm @ 30A, 4.5V | 1.2V @ 1mA | 182nC @ 5V | ±12V | 10900pF @ 10V | - | 78W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 100V 24A 8-SOP |
5,436 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 24A (Tc) | 10V | 13.6mOhm @ 12A, 10V | 4V @ 300µA | 22nC @ 10V | ±20V | 1900pF @ 50V | - | 1.6W (Ta), 48W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
|
|
Rohm Semiconductor |
NCH 250V 6A POWER MOSFET |
3,600 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 6A (Tc) | 10V | 530mOhm @ 3A, 10V | 5V @ 1mA | 15nC @ 10V | ±30V | 840pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
ON Semiconductor |
MOSFET N-CH 150V 14A DPAK |
2,016 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 14A (Tc) | 10V | 120mOhm @ 4A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 743pF @ 25V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
ON Semiconductor |
MOSFET N-CH 30V 14.5A DPAK |
7,020 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 14.5A (Ta), 124A (Tc) | 4.5V, 11.5V | 4mOhm @ 30A, 10V | 2.5V @ 250µA | 40nC @ 4.5V | ±20V | 4490pF @ 12V | - | 1.43W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Rohm Semiconductor |
NCH 45V 20A POWER MOSFET |
6,912 |
|
- | N-Channel | MOSFET (Metal Oxide) | 45V | 20A (Ta) | 4V, 10V | 28mOhm @ 20A, 10V | 2.5V @ 1mA | 12nC @ 5V | ±20V | 950pF @ 10V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Vishay Siliconix |
MOSFET N-CH 30V 25.4A 8-SOIC |
5,904 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 25.4A (Tc) | 4.5V, 10V | 4.9mOhm @ 15A, 10V | 2.4V @ 250µA | 54nC @ 10V | ±20V | 2071pF @ 15V | - | 2.5W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
ON Semiconductor |
MOSFET N-CH 100V 33A D2PAK |
17,460 |
|
UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 33A (Tc) | 10V | 40mOhm @ 33A, 10V | 4V @ 250µA | 79nC @ 20V | ±20V | 1220pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
Nexperia |
MOSFET N-CH 40V 75A TO220AB |
21,090 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 5mOhm @ 50A, 10V | 4V @ 1mA | 127nC @ 10V | ±20V | 5000pF @ 25V | Current Sensing | 272W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
|
|
Nexperia |
MOSFET N-CH 30V 75A D2PAK |
2,934 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 5V, 10V | 2.4mOhm @ 25A, 10V | 2V @ 1mA | 89nC @ 5V | ±15V | 10185pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
STMicroelectronics |
MOSFET N-CH 30V 12A POWERFLAT |
6,390 |
|
STripFET™ V | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 9mOhm @ 6A, 10V | 2.5V @ 250µA | 12nC @ 4.5V | ±22V | 1500pF @ 25V | - | 2W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (3.3x3.3) | 8-PowerVDFN |
|
|
Vishay Siliconix |
MOSFET P-CHANNEL 30V 30A 8SOIC |
2,322 |
|
Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 8.5mOhm @ 10A, 10V | 2.5V @ 250µA | 113nC @ 10V | ±20V | 4500pF @ 15V | - | 7W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
|
|
ON Semiconductor |
MOSFET N-CH 40V 16.4A DPAK |
3,348 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 16.4A (Ta), 50A (Tc) | 4.5V, 10V | 6.7mOhm @ 15A, 10V | 3V @ 250µA | 64nC @ 10V | ±20V | 3515pF @ 20V | - | 3.1W (Ta), 65W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Rohm Semiconductor |
RD3H080SPFRA IS A POWER MOSFET W |
7,812 |
|
Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 45V | 8A (Ta) | 4V, 10V | 91mOhm @ 8A, 10V | 3V @ 1mA | 9nC @ 5V | ±20V | 1000pF @ 10V | - | 15W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Panasonic Electronic Components |
MOSFET N-CH 500V 2.5A TO-220D |
13,806 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 4Ohm @ 1.5A, 10V | 5V @ 1mA | - | ±30V | 330pF @ 20V | - | 2W (Ta), 30W (Tc) | 150°C (TJ) | Through Hole | TO-220D-A1 | TO-220-3 Full Pack |
|
|
Diodes Incorporated |
MOSFET NCH 40V 110A POWERDI |
4,032 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 110A (Tc) | 10V | 7mOhm @ 50A, 10V | 4V @ 250µA | - | 20V | 2280pF @ 25V | - | 1.6W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
|
|
Diodes Incorporated |
MOSFET NCH 40V 100A TO252 |
6,930 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 3mOhm @ 50A, 10V | 3V @ 250µA | 83nC @ 10V | ±20V | 4450pF @ 25V | - | 3.9W (Ta), 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
|
|
Diodes Incorporated |
MOSFET P-CH 250V 0.26A DFN2020-6 |
7,434 |
|
- | P-Channel | MOSFET (Metal Oxide) | 250V | 260mA (Ta) | 3.5V, 10V | 14Ohm @ 200mA, 10V | 2.5V @ 1mA | 2.8nC @ 10V | ±40V | 81pF @ 25V | - | 600mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
|
|
Diodes Incorporated |
MOSFET BVDSS: 41V 60V POWERDI506 |
6,426 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 20.6A (Ta), 100A (Tc) | 4.5V, 10V | 5.5mOhm @ 50A, 10V | 3V @ 250µA | 47.1nC @ 10V | ±20V | 2962pF @ 30V | - | 3.2W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |