TPH1R712MD,L1Q
For Reference Only
| Part Number | TPH1R712MD,L1Q |
| PNEDA Part # | TPH1R712MD-L1Q |
| Description | MOSFET P-CH 20V 60A 8SOP ADV |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 2,610 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Dec 20 - Dec 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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TPH1R712MD Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | TPH1R712MD,L1Q |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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TPH1R712MD Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSVI |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 30A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 182nC @ 5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 10900pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 78W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Package / Case | 8-PowerVDFN |
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