Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 205/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 8A 6DFN |
5,058 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 8A (Ta) | 4.5V, 10V | 32mOhm @ 8A, 10V | 2.3V @ 250µA | 14.5nC @ 10V | ±20V | 530pF @ 15V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN-EP (2x2) | 6-UDFN Exposed Pad |
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Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3 |
4,482 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 310mA (Tj) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Diodes Incorporated |
MOSFET N-CH 12V 70A POWERDI3333 |
7,848 |
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- | N-Channel | MOSFET (Metal Oxide) | 12V | 70A (Tc) | 2.5V, 4.5V | 3.8mOhm @ 15A, 4.5V | 1V @ 250µA | 47nC @ 8V | ±8V | 2385pF @ 6V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Microchip Technology |
MOSFET P-CH 6V 2A SC70-6 |
2,718 |
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- | P-Channel | MOSFET (Metal Oxide) | 6V | 2A (Ta) | 1.8V, 4.5V | 84mOhm @ 100mA, 4.5V | 1.2V @ 250µA | - | 6V | - | - | 270mW (Ta) | -40°C ~ 150°C (TJ) | Surface Mount | SC-70-6 | 6-TSSOP, SC-88, SOT-363 |
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ON Semiconductor |
MOSFET N-CH 30V 11A SO8FL |
7,632 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 69A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.1V @ 250µA | 26nC @ 10V | ±20V | 1683pF @ 15V | - | 770mW (Ta), 30.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 20V 3.3A MICRO |
7,884 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | - | 1.5V, 4.5V | 44mOhm @ 1.5A, 4.5V | 900mV @ 250µA | 18nC @ 8V | ±8V | 630pF @ 10V | - | 780mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-Micro Foot (1x1) | 4-UFBGA |
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Alpha & Omega Semiconductor |
MOSFET N CH 20V 8A DFN 2x2B |
4,572 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 8A (Ta) | 2.5V, 4.5V | 14.5mOhm @ 8A, 4.5V | 1.2V @ 250µA | 7nC @ 4.5V | ±12V | 782pF @ 10V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN-EP (2x2) | 6-UDFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO252 |
20,346 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Central Semiconductor Corp |
MOSFET N-CH 20V 0.1A SOT-883 |
2,412 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | 900mV @ 250µA | 0.57nC @ 4.5V | 10V | 9pF @ 3V | - | 100mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-883 | SC-101, SOT-883 |
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Texas Instruments |
MOSFET N-CH 30V 35A 8VSON |
7,802 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 10.2mOhm @ 8A, 10V | 1.9V @ 250µA | 15nC @ 10V | ±20V | 998pF @ 15V | - | 3.2W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (3x3.15) | 8-PowerVDFN |
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Central Semiconductor Corp |
MOSFET P-CH 20V 0.1A SOT-883 |
6,120 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 8Ohm @ 10mA, 4V | 1.1V @ 250µA | 0.66nC @ 4.5V | 10V | 45pF @ 3V | - | 100mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-883 | SC-101, SOT-883 |
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Microchip Technology |
MOSFET P-CH 6V 2A SC70-6 |
8,514 |
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- | P-Channel | MOSFET (Metal Oxide) | 6V | 2A (Ta) | 1.8V, 4.5V | 84mOhm @ 100mA, 4.5V | 1.2V @ 250µA | - | 6V | - | - | 270mW (Ta) | -40°C ~ 150°C (TJ) | Surface Mount | SC-70-6 | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
MOSFET N-CH 30V 60A POWERPAKSO-8 |
7,452 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 4.6mOhm @ 15A, 10V | 2.4V @ 250µA | 38nC @ 10V | +20V, -16V | 1535pF @ 15V | - | 34.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET P-CHANNEL 20V 12A 6PQFN |
4,212 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 12A (Ta) | 1.5V, 4.5V | 13mOhm @ 2.5A, 4.5V | 1.4V @ 250µA | 39nC @ 4.5V | ±8V | 4383pF @ 10V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerWDFN |
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Nexperia |
MOSFET N-CH 30V MLFP |
8,406 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 66A (Tc) | 4.5V, 10V | 6.3mOhm @ 15A, 10V | 2.2V @ 1mA | 13.7nC @ 10V | ±20V | 832pF @ 15V | - | 51W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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Rohm Semiconductor |
MOSFET N-CH 20V 3.5A TUMT6 |
3,636 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 1.5V, 4.5V | 43mOhm @ 3.5A, 4.5V | 1V @ 1mA | 5.7nC @ 4.5V | ±10V | 460pF @ 10V | - | 320mW (Ta) | 150°C (TJ) | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 30V 23A 8WDFN |
6,156 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 4.5A (Ta), 23A (Tc) | 4.5V, 10V | 23mOhm @ 6A, 10V | 2.2V @ 250µA | 5.5nC @ 4.5V | ±20V | 476pF @ 15V | - | 790mW (Ta), 20.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4A UFM |
3,384 |
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U-MOSIV | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.5V, 4V | 38mOhm @ 3A, 4V | 1V @ 1mA | 22.3nC @ 4V | ±8V | 1484pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 30V 1A TUMT3 |
8,478 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 1A (Ta) | 4V, 10V | 350mOhm @ 1A, 10V | - | 1.9nC @ 5V | ±20V | 120pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
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Vishay Siliconix |
MOSFET N-CH 30V 18A POWERPAK1212 |
3,816 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Tc) | 4.5V, 10V | 13.5mOhm @ 15A, 10V | 2.3V @ 250µA | 24.5nC @ 10V | ±20V | 722pF @ 15V | Schottky Diode (Body) | 27.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Rohm Semiconductor |
MOSFET N-CHANNEL 30V 39A 8HSMT |
3,654 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 39A (Tc) | 4.5V, 10V | 3.9mOhm @ 18A, 10V | 2.5V @ 1mA | 37nC @ 4.5V | ±20V | 3500pF @ 15V | - | 2W (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET N-CH 30V 2A TSMT6 |
4,914 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 134mOhm @ 2A, 10V | 2.5V @ 1mA | 3.1nC @ 5V | ±20V | 110pF @ 10V | - | 600mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET N-CH 30V 2A TSMT5 |
3,564 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 2.5V, 4.5V | 100mOhm @ 2A, 4.5V | 1.5V @ 1mA | 3.9nC @ 4.5V | ±12V | 175pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | 150°C (TJ) | Surface Mount | TSMT5 | SOT-23-5 Thin, TSOT-23-5 |
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Rohm Semiconductor |
RQ5H030TN IS A MOSFET WITH G-S P |
4,338 |
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- | N-Channel | MOSFET (Metal Oxide) | 45V | 3A (Ta) | 2.5V, 4.5V | 67mOhm @ 3A, 4.5V | 1.5V @ 1mA | 6.2nC @ 4.5V | ±12V | 510pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 20V 6.5A TSMT8 |
2,286 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | 1.5V, 4.5V | 22mOhm @ 6.5A, 4.5V | 1V @ 1mA | 11nC @ 4.5V | ±10V | 870pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSMT8 | 8-SMD, Flat Lead |
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ON Semiconductor |
MOSFET P-CH 12V 3A MCPH3 |
3,418 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 3A (Ta) | 1.8V, 4V | 70mOhm @ 1.5A, 4.5V | - | 5.6nC @ 4.5V | ±8V | 405pF @ 6V | - | 1W (Ta) | - | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 52A 8PDFN |
6,570 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 52A (Tc) | 4.5V, 10V | 8.5mOhm @ 13A, 10V | 2.5V @ 250µA | 14.3nC @ 10V | ±20V | 817pF @ 15V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3x3) | 8-PowerWDFN |
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Rohm Semiconductor |
MOSFET P-CH 20V 1A TUMT3 |
7,308 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 2.5V, 4.5V | 390mOhm @ 1A, 4.5V | 2V @ 1mA | 2.1nC @ 4.5V | ±12V | 150pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
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Diodes Incorporated |
MOSFET BVDSS: 8V 24V U-WLB1010-4 |
6,984 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 3.3A (Ta) | 1.5V, 4.5V | 40mOhm @ 1.5A, 4.5V | 900mV @ 250µA | 47nC @ 8V | ±8V | 1400pF @ 10V | - | 720mW | -55°C ~ 150°C (TJ) | Surface Mount | U-WLB1010-4 | 4-UFBGA, WLBGA |
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Nexperia |
MOSFET N-CH 100V 30A LFPAK |
8,550 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 30A (Tc) | 5V, 10V | 37.5mOhm @ 5A, 10V | 2.1V @ 1mA | 39.2nC @ 10V | ±20V | 1905pF @ 25V | - | 94.9W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |