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RQ1C065UNTR

RQ1C065UNTR

For Reference Only

Part Number RQ1C065UNTR
PNEDA Part # RQ1C065UNTR
Description MOSFET N-CH 20V 6.5A TSMT8
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 2,286
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RQ1C065UNTR Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRQ1C065UNTR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RQ1C065UNTR, RQ1C065UNTR Datasheet (Total Pages: 12, Size: 2,710.91 KB)
PDFRQ1C065UNTR Datasheet Cover
RQ1C065UNTR Datasheet Page 2 RQ1C065UNTR Datasheet Page 3 RQ1C065UNTR Datasheet Page 4 RQ1C065UNTR Datasheet Page 5 RQ1C065UNTR Datasheet Page 6 RQ1C065UNTR Datasheet Page 7 RQ1C065UNTR Datasheet Page 8 RQ1C065UNTR Datasheet Page 9 RQ1C065UNTR Datasheet Page 10 RQ1C065UNTR Datasheet Page 11

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RQ1C065UNTR Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs22mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds870pF @ 10V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTSMT8
Package / Case8-SMD, Flat Lead

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