Transistors - FETs, MOSFETs - Arrays
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Arrays
Records 3,829
Page 26/128
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
59,664 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
98,832 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V | 2.5V @ 3mA, 2.5V @ 12mA | 2.7nC @ 5V, 12nC @ 5V | 300pF @ 30V, 1200pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
100,422 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A, 38A | 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V | 2.5V @ 2.5mA, 2.5V @ 10mA | 2.5nC @ 5V, 10nC @ 5V | 300pF @ 40V, 1100pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
Infineon Technologies |
MOSFET MOD 1200V 25A |
6,696 |
|
CoolSiC™+ | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V | 25A (Tj) | 45mOhm @ 25A, 15V (Typ) | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | 20mW | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-EASY1BM-2 |
|
|
|
Infineon Technologies |
MOSFET MOD 1200V 50A |
7,542 |
|
CoolSiC™+ | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V | 50A (Tj) | 22.5mOhm @ 50A, 15V | 5.55V @ 20mA | 124nC @ 15V | 3680pF @ 800V | 20mW | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-EASY1BM-2 |
|
|
|
Diodes Incorporated |
MOSFET N-CH 100V SOT523 |
25,554 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET 2N-CH 50V 0.28A SOT-563 |
28,908 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 50V | 280mA | 2Ohm @ 50mA, 5V | 1V @ 250µA | - | 50pF @ 25V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET 2P-CH 20V 0.1A ES6 |
35,268 |
|
- | 2 P-Channel (Dual) | Logic Level Gate | 20V | 100mA | 8Ohm @ 50mA, 4V | 1V @ 1mA | - | 12.2pF @ 3V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) |
|
|
|
Diodes Incorporated |
MOSFET 2N-CH 60V 0.28A SOT-563 |
161,454 |
|
- | 2 N-Channel (Dual) | Standard | 60V | 280mA | 7.5Ohm @ 50mA, 5V | 2.5V @ 250µA | - | 50pF @ 25V | 150mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
|
Micro Commercial Co |
MOSFET N/P-CH 12V 6A/4.1A |
25,122 |
|
- | N and P-Channel | Logic Level Gate, 1.8V Drive | 12V | 6A, 4.1A | 24mOhm @ 6A, 10V | 1V @ 250µA | 12nC @ 10V | 630pF @ 10V | - | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | DFN2020-6U |
|
|
|
Vishay Siliconix |
MOSFET 2N-CH 30V 4.5A SC70-6 |
48,858 |
|
TrenchFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.5A | 64mOhm @ 3A, 4.5V | 1.4V @ 250µA | 12nC @ 10V | - | 7.8W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual |
|
|
|
Diodes Incorporated |
MOSFET 2N-CH 50V 305MA SOT26 |
3,872 |
|
- | 2 N-Channel (Dual) | Standard | 50V | 305mA | 2Ohm @ 50mA, 5V | 1V @ 250µA | - | 50pF @ 25V | 400mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 |
|
|
|
Nexperia |
MOSFET 2 N-CH 30V 2.7A 6HUSON |
22,344 |
|
- | 2 N-Channel (Dual) | Standard | 30V | 2.7A (Ta) | 99mOhm @ 2.8A, 4.5V | 1.25V @ 250µA | 4.5nC @ 4.5V | 258pF @ 15V | 510mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-HUSON-EP (2x2) |
|
|
|
Diodes Incorporated |
MOSFET 2N-CH 60V 0.28A SOT-563 |
5,040 |
|
- | 2 N-Channel (Dual) | Standard | 60V | 280mA | 7.5Ohm @ 50mA, 5V | 2.5V @ 250µA | - | 50pF @ 25V | 150mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
|
Vishay Siliconix |
MOSFET 2N-CH 25V 8A 8SOIC |
23,910 |
|
TrenchFET® | 2 N-Channel (Dual) | Logic Level Gate | 25V | 8A | 25mOhm @ 7.3A, 10V | 2.2V @ 250µA | 12nC @ 10V | 415pF @ 13V | 2.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Rohm Semiconductor |
-20V PCH+PCH POWER MOSFET |
27,534 |
|
- | 2 P-Channel (Dual) | - | 20V | 3A | 85mOhm @ 3A, 4.5V | 1V @ 1mA | 8.5nC @ 4.5V | 2000pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 6-PowerUDFN | HUML2020L8 |
|
|
|
Panasonic Electronic Components |
MOSFET 2N-CH 20V 0.1A SSMINI-6 |
3,474 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 20V | 100mA | 4Ohm @ 10mA, 4V | 1.3V @ 50µA | - | 10pF @ 3V | 125mW | 125°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSMINI6-F1 |
|
|
|
Diodes Incorporated |
MOSFET 8V 24V POWERDI5060-8 |
19,632 |
|
- | N and P-Channel | Standard | 12V | 9.5A, 6.9A | 17mOhm @ 11.8A, 4.5V | 1.5V @ 250µA | 15.6nC @ 4.5V | 1495pF @ 6V | 2.3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 |
|
|
|
Panasonic Electronic Components |
MOSFET 2N-CH 30V 0.1A SSMINI-5 |
8,208 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 30V | 100mA | 8Ohm @ 10mA, 4V | 1.5V @ 1µA | - | 12pF @ 3V | 125mW | 125°C (TJ) | Surface Mount | SOT-665 | SSMini5-F2 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET 2N-CH 60V 0.2A ES6 |
3,312 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 60V | 200mA | 2.1Ohm @ 500mA, 10V | 3.1V @ 250µA | - | 17pF @ 25V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 |
|
|
|
Diodes Incorporated |
MOSFET 2N-CH 30V 2.9A DFN |
8,262 |
|
Automotive, AEC-Q101 | 2 N-Channel (Dual) | Standard | 30V | 3.7A (Ta) | 120mOhm @ 2.5A, 10V | 3V @ 250µA | 2.3nC @ 4.5V | 190pF @ 25V | 1.7W | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | W-DFN3020-8 |
|
|
|
Panasonic Electronic Components |
MOSFET 2N-CH 20V 7A WMINI8 |
27,624 |
|
- | 2 N-Channel (Dual) | Standard | 20V | 7A | 21mOhm @ 2A, 4.5V | 1.3V @ 1mA | - | 1500pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | WMini8-F1 |
|
|
|
Nexperia |
MOSFET N/P-CH 30V 8SOIC |
57,972 |
|
- | N and P-Channel | Logic Level Gate | 30V | 3.5A, 2.3A | 100mOhm @ 2.2A, 10V | 2.8V @ 1mA | 30nC @ 10V | 250pF @ 20V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Nexperia |
MOSFET 2P-CH 20V 0.5A 6DFN |
3,582 |
|
- | 2 P-Channel (Dual) | Logic Level Gate | 20V | 500mA | 1.4Ohm @ 500mA, 4.5V | 950mV @ 250µA | 2.1nC @ 4.5V | 43pF @ 10V | 265mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFDFN Exposed Pad | DFN1010B-6 |
|
|
|
Vishay Siliconix |
MOSFET 2N-CH 20V SC89-6 |
6,030 |
|
TrenchFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 610mA (Ta) | 396mOhm @ 500mA, 4.5V | 1V @ 250µA | 2nC @ 8V | 43pF @ 10V | 220mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 |
|
|
|
Diodes Incorporated |
MOSFET 2N-CH 60V 0.305A SOT563 |
5,058 |
|
- | 2 N-Channel (Dual) | Standard | 60V | 305mA | 2Ohm @ 500mA, 10V | 2.5V @ 250µA | - | 50pF @ 25V | 250mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 30V 0.25A SC-88 |
6,840 |
|
- | 2 N-Channel (Dual) | Standard | 30V | 250mA | 1.5Ohm @ 10mA, 4V | 1.5V @ 100µA | 1.3nC @ 5V | 33pF @ 5V | 272mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 30V 0.25A SC-88 |
6,786 |
|
- | 2 N-Channel (Dual) | Standard | 30V | 250mA | 1.5Ohm @ 10mA, 4V | 1.5V @ 100µA | 1.3nC @ 5V | 33pF @ 5V | 272mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 |
|
|
|
Nexperia |
BSS138BKS/SOT363/SC-88 |
3,528 |
|
Automotive, AEC-Q101 | 2 N-Channel (Dual) | Logic Level Gate | 60V | 320mA (Ta) | 1.6Ohm @ 320mA, 10V | 1.6V @ 250µA | 0.7nC @ 4.5V | 56pF @ 10V | 445mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
|
|
|
ON Semiconductor |
MOSFET N/P-CH 20V SOT-563 |
532,632 |
|
- | N and P-Channel | Logic Level Gate | 20V | 540mA, 430mA | 550mOhm @ 540mA, 4.5V | 1V @ 250µA | 2.5nC @ 4.5V | 150pF @ 16V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |