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SIA922EDJ-T1-GE3

SIA922EDJ-T1-GE3

For Reference Only

Part Number SIA922EDJ-T1-GE3
PNEDA Part # SIA922EDJ-T1-GE3
Description MOSFET 2N-CH 30V 4.5A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 48,858
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA922EDJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA922EDJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIA922EDJ-T1-GE3, SIA922EDJ-T1-GE3 Datasheet (Total Pages: 9, Size: 281.42 KB)
PDFSIA922EDJ-T1-GE3 Datasheet Cover
SIA922EDJ-T1-GE3 Datasheet Page 2 SIA922EDJ-T1-GE3 Datasheet Page 3 SIA922EDJ-T1-GE3 Datasheet Page 4 SIA922EDJ-T1-GE3 Datasheet Page 5 SIA922EDJ-T1-GE3 Datasheet Page 6 SIA922EDJ-T1-GE3 Datasheet Page 7 SIA922EDJ-T1-GE3 Datasheet Page 8 SIA922EDJ-T1-GE3 Datasheet Page 9

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SIA922EDJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.5A
Rds On (Max) @ Id, Vgs64mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max7.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

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