Transistors - Bipolar (BJT) - Single, Pre-Biased
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CategorySemiconductors / Transistors / Transistors - Bipolar (BJT) - Single, Pre-Biased
Records 3,282
Page 52/110
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Resistor - Base (R1) | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | Frequency - Transition | Power - Max | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN |
6,984 |
|
- | NPN - Pre-Biased | 100mA | 50V | 22 kOhms | 47 kOhms | 80 @ 10mA, 5V | 300mV @ 500µA, 5mA | 500nA | - | 150mW | Surface Mount | SOT-723 | VESM |
|
|
|
Rohm Semiconductor |
DTD123YCHZG IS THE HIGH RELIABIL |
7,938 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Rohm Semiconductor |
DIGITAL TRANSISTOR PNP 50V 100MA |
4,806 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
TRANSISTOR NPN BRT Q1BSR22KOHM Q |
2,772 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
NPN BRT Q1BSR2.2KOHM Q1BER10KOHM |
4,158 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
NPN BRT Q1BSR10KOHM Q1BER4.7KOHM |
3,526 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
NPN BRT Q1BSR47KOHM Q1BER10KOHM |
5,868 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
TRANSISTOR PNP BRT Q1BSR22KOHM Q |
8,496 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
TRANSISTOR PNP BRT Q1BSR4.7KOHM |
7,596 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR10KOHM Q1BERINFINIT |
7,236 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR4.7KOHM Q1BER10KOHM |
5,886 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR47KOHM Q1BER10KOHM |
5,328 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Rohm Semiconductor |
DTA123EU3 IS AN DIGITAL TRANSIST |
6,516 |
|
- | PNP - Pre-Biased | 100mA | 50V | 2.2 kOhms | 2.2 kOhms | 20 @ 20mA, 5V | 300mV @ 500µA, 10mA | - | 250MHz | 200mW | Surface Mount | SC-70, SOT-323 | UMT3 |
|
|
|
Toshiba Semiconductor and Storage |
TRANSISTOR NPN BRT Q1BSR4.7KOHM |
6,318 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR22KOHM Q1BER22KOHM |
4,806 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR47KOHM Q1BER47KOHM |
3,598 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR2.2KOHM Q1BER47KOHM |
6,228 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR4.7KOHM Q1BER47KOHM |
8,910 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR22KOHM Q1BER47KOHM |
2,304 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR47KOHM Q1BER22KOHM |
3,240 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR47KOHM Q1BERINFINIT |
6,534 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Rohm Semiconductor |
DTB113ECHZG IS THE HIGH RELIABIL |
7,866 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Micro Commercial Co |
TRANS PREBIAS NPN 200MW SOT23 |
5,976 |
|
- | NPN - Pre-Biased | 100mA | 50V | 10 kOhms | 10 kOhms | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
|
|
|
Toshiba Semiconductor and Storage |
TRANSISTOR PNP BRT Q1BSR0.47KOHM |
8,208 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
TRANSISTOR PNP BRT Q1BSR1KOHM Q1 |
8,406 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
TRANS PREBIAS PNP 0.246W SOT-23 |
4,230 |
|
- | PNP - Pre-Biased | 100mA | 50V | 4.7 kOhms | - | 160 @ 5mA, 10V | 250mV @ 1mA, 10mA | 500nA | - | 246mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
|
|
ON Semiconductor |
TRANS PREBIAS PNP 246MW SOT23-3 |
7,254 |
|
- | PNP - Pre-Biased | 100mA | 50V | 10 kOhms | 47 kOhms | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 246mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
|
|
ON Semiconductor |
TRANS PREBIAS PNP 202MW SC70-3 |
4,590 |
|
- | PNP - Pre-Biased | 100mA | 50V | 1 kOhms | 1 kOhms | 3 @ 5mA, 10V | 250mV @ 5mA, 10mA | 500nA | - | 202mW | Surface Mount | SC-70, SOT-323 | SC-70-3 (SOT323) |
|
|
|
ON Semiconductor |
TRANS PREBIAS PNP 202MW SC70-3 |
5,940 |
|
- | PNP - Pre-Biased | 100mA | 50V | 22 kOhms | 47 kOhms | 80 @ 5mA, 10V | 250mV @ 1mA, 10mA | 500nA | - | 202mW | Surface Mount | SC-70, SOT-323 | SC-70-3 (SOT323) |
|
|
|
ON Semiconductor |
TRANS PREBIAS NPN 338MW SC59 |
3,580 |
|
- | NPN - Pre-Biased | 100mA | 50V | 47 kOhms | 22 kOhms | 80 @ 5mA, 10V | 250mV @ 5mA, 10mA | 500nA | - | 338mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59 |