RN1108MFV,L3F
For Reference Only
Part Number | RN1108MFV,L3F |
PNEDA Part # | RN1108MFV-L3F |
Description | TRANS PREBIAS NPN |
Manufacturer | Toshiba Semiconductor and Storage |
Unit Price | Request a Quote |
In Stock | 6,984 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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RN1108MFV Resources
Brand | Toshiba Semiconductor and Storage |
ECAD Module | |
Mfr. Part Number | RN1108MFV,L3F |
Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single, Pre-Biased |
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RN1108MFV Specifications
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 22 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VESM |
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