Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 419/2164

Part Number	Description	In Stock
JAN2N1485 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 3A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/207 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 40mA, 750mA Current - Collector Cutoff (Max): 15µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 750mA, 4V Power - Max: 1.75W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-233AA, TO-8-3 Lens Top Metal Can Supplier Device Package: TO-8	In Stock2,538
JAN2N1486 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 55V 3A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/207 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 55V Vce Saturation (Max) @ Ib, Ic: 750mV @ 40mA, 750mA Current - Collector Cutoff (Max): 15µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 750mA, 4V Power - Max: 1.75W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-233AA, TO-8-3 Lens Top Metal Can Supplier Device Package: TO-8	In Stock6,444
JAN2N1489 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 6A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/208 Transistor Type: NPN Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 3V @ 300mA, 1.5A Current - Collector Cutoff (Max): 25µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 4V Power - Max: 75W Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-33 (TO-204AA)	In Stock8,550
JAN2N1613 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 30V 0.5A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/181 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	In Stock6,066
JAN2N1711 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 30V 0.5A TO-39 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/225 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock86
JAN2N1893 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-5 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/182 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock5,580
JAN2N1893S Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-39 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/182 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 3W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	In Stock357
JAN2N2218 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 30V 0.8A TO39 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/251 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	In Stock6,390
JAN2N2218A Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A TO39 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/251 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	In Stock8,424
JAN2N2218AL Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A TO5 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/251 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock3,490
JAN2N2219 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 30V 0.8A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/251 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock2,286
JAN2N2219A Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/251 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock8,298
JAN2N2219AL Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/251 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock5,166
JAN2N2221A Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A TO18 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/255 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	In Stock4,320
JAN2N2221AL Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A TO18 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/255 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	In Stock5,598
JAN2N2221AUA Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/255 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	In Stock2,844
JAN2N2221AUB Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/255 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	In Stock8,028
JAN2N2222A Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/255 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-218	In Stock3,418
JAN2N2222AL Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/255 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	In Stock5,670
JAN2N2222AUA Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/255 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD Supplier Device Package: -	In Stock2,538
JAN2N2222AUB Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/255 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Non-Standard Supplier Device Package: -	In Stock2,718
JAN2N2369A Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 15V TO18 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/317 Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Power - Max: 360mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	In Stock6,606
JAN2N2369AUA Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 15V Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/317 Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Power - Max: 360mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	In Stock6,282
JAN2N2369AUB Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 15V Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/317 Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Power - Max: 360mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	In Stock6,030
JAN2N2432 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 30V 0.1A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/313 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Power - Max: 360mW Frequency - Transition: - Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	In Stock6,444
JAN2N2432A Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 45V 0.1A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/313 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Power - Max: 360mW Frequency - Transition: - Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	In Stock4,302
JAN2N2484 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.05A TO18 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/376 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V Power - Max: 360mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	In Stock3,544
JAN2N2484UA Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.05A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/376 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V Power - Max: 360mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	In Stock8,694
JAN2N2484UB Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.05A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/376 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V Power - Max: 360mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	In Stock8,028
JAN2N2605 Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.03A TO46 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/354 Transistor Type: PNP Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Power - Max: 400mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46-3	In Stock4,746

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